DS201 Search Results

DS4191

Contextual Info: DS2012SF MITEL @ Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V I F a v ,

DS2009

Abstract: DS2013
Contextual Info: DS2013 DALLAS SEMICONDUCTOR DS2013 8 1 9 2 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* D8C 2 D3C 3 • Flexible 8192 x 9 organization • Low-power HCMOS technology D2C 4 D1C 5 DOC 6 • Asychronous and simultaneous read/write

quad port ram

Abstract: DS2015 32-PIN D062 DS1206 DS2011 DS2012 DS2012R
Contextual Info: DALLAS SEMICONDUCTOR CORP OTE D | S b m i 3 G 0DDE12b 0 I T '^ 6 '3 5 & Dallas Semiconductor 4 096x9 FIFO PRELIMINARY : DS2012 28-Pin DIP DS2012R 32-Pin PLCC a“ FEATURES PIN CONNECTIONS • First-in, first-out memory based architecture • Flexible 4096 x 9 organization

DS2016

Abstract: DS2016R DS2016S SEPTEMBER10
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: September 10, 1999 Product Change Notice – I91501 Subject: Package Obsolescence - DS2016S 2K x 8 3V/5V Operation Static RAM Description of Change: Effective October 30, 1999, Dallas Semiconductor will no longer produce or sell the DS2016S 2K

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current - 50 nA max at tA = 25°C Vc c = 3.0V - 100 nA max at tA = 25°C V cc = 5.5V 1 |iA max at tA = 60°C Vc c = 5.5V • Full operation for V qc = 5.5V to 2.7V

Contextual Info: DS2015 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2015 Quad Port Serial RAM Chip PIN CONNECTIONS • Four partitioned easy access ports • No arbitration required • Message flag for each port RSTOC 1 18 □ Vcc CLKO C 2 17 Ü R S T 3 DQO H 3 16 □ CLK3

Contextual Info: DS2015 DALLAS s e m ic o n d u c to r DS2015 Q uad Port Serial RAM Chip PIN ASSIGNMENT FEATURES • Four partitioned easy access ports RSTO [ • No arbitration required CLKO • Message flag for each port [_2 15 ] 5 17 14 ] 13 ] CLK3 DQ3 M3 M2 CLK1 C 7 12 ]

Contextual Info: DALLAS SEMICONDUCTOR DS2012 4096 x 9 FIFO Chip FEATURES PIN ASSIGNMENT w c 1 26 □ • Flexible 4096 x 9 organization D8C 2 D3C 3 27 • Low-power H C M O S technology D 2C 4 • Asychronous and simultaneous read/write D iC 5 DOC 6 25 24 c 7 FF C 8 QOC 9

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V

DS2016S

Abstract: DS2016S-100 DS2016
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: February 28, 1996 Subject: PRODUCT CHANGE NOTICE – B60801 Description: DS2016 200ns to 250ns Change Description of Change: Effective May 1, 1996, the specified 3–volt access time of the DS2016 will change from 200ns to 250ns.

Contextual Info: MITEL DS2012SF Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 KEY PARAMETERS VRRM 6000V IF av, 1015A ' fsm 16500A APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.

VI05

Abstract: DS2016 DS2016-100 DS2016S
Contextual Info: DS 2016 DALLAS s e m ic o n d u c to r DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low pow er C M OS design • S tandby current A7 C 1 24 □ VCC A6 C 2 ^ 23 □ A8 A9 - 50 nA m ax at tA = 25°C V Cc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C V Cc = 5.5V

Contextual Info: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT 50 nA max at tA = 25°C Vc c = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 nA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V • Data Retention Voltage = 5.5V to 2.0V

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V

Contextual Info: DS2012SM42 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage4.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.13k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = 25°C VCC = 3.0V - 100nA max at tA = 25°C VCC = 5.5V - 1µA max at tA = 60°C VCC = 5.5V

5630 LED

Abstract: 5630 led 6500K AB201 Midpower 5630 LED 5630 luxeon 5630 LED 5630 lumen MXL8-PW5080
Contextual Info: Illumination Portfolio LUXEON Mid-Power 5630 LEDs Optimized solutions for illumination applications Technical Datasheet DS201 LUXEON Mid-Power 5630 LEDs Illumination Portfolio Introduction The LUXEON Mid-Power 5630 LED portfolio in this datasheet delivers optimized performance

DS2011

Abstract: DS2009
Contextual Info: DS2011 DA L L A S S E M I C O N D U C T O R CORP DALLAS SEMICONDUCTOR SDE D Sbl4130 GGÜMblb 4 « D A L DS2011 2048x9 FIFO Chip t - hl FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1» DSC 2 D3C 3 D2C 4 D1C 5 DOC 6 XI C 7 FF C 8

Contextual Info: DS2011 DALLAS SEMICONDUCTOR DS2011 2048 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1* DSC 2 D3C 3 • Flexible 2048 x 9 organization D2C D id DOC XI C FF C • Low-power HCMOS technology • Asychronous and simultaneous read/write

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current - 50 nA max at tA = 25°C VCc = 3.0V - 100 n A m a x at tA = 25°C V GG = 5.5V - 1 |uA max at tA = 60°C Vc c = 5.5V

Contextual Info: AUGUST 1995 DS2012SF DS4191-2.3 DS2012SF RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 6000V VRRM 1015A IF AV 16500A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

Contextual Info: DALLAS SEMICONDUCTOR DS2010 1024x9 FIFO Chip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W C 1* 28 □ V C C 27 □ D4 • Flexible 1024 x 9 organization D SC 2 D3C 3 • Low-power HCMOS technology D 2Ü 4 24 • Asychronous and simultaneous read/write

Contextual Info: DS2016. DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A7 • Standby current A6 C 1 C 2 ASH 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at t* = 25°C Vcc = 5.5V 1 jA max at t* = 60°C Vcc = 5.5V