IMS1223 Search Results

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

K4505

Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Contextual Info: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4

IMS1223P-25

Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
Contextual Info: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times

Contextual Info: IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C M HO S’ DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

IMS1223A-25M

Abstract: IMS1223M IMS1223S-25M
Contextual Info: I IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

ic 7493 truth table

Contextual Info: • ¡¡¡¡, . IMS1223M : cmos High Performance 1K x 4 Static RAM MIL-STD-883C DOHTIOS8 FEATURES DESCRIPTION • INMOS' Very High Speed CMOS ■ Advanced Process -1 .6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to + 125° C

122325

Contextual Info: IMS1223 CMOS High Performance 1K x 4 Static RAM u ilT IO S FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times

ACS 085

Abstract: IMS1223A-25M IMS1223M IMS1223S-25M IMS1223S-35M 1K x 4 static ram ttl
Contextual Info: IM S 1 2 2 3 M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C • DGHmOS’ DESCRIPTION FEATURES INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules Specifications guaranteed over full military temperature range -55° C to + 125° C

MKB6116

Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Contextual Info: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

e/MA3110

Contextual Info: IM S 1 2 2 3 i:. : !•■■■■ '■■■ cmos High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 1K x 4 Bit Organization • 25, 35, and 45 nsec Access Times

LC3514AL-15

Abstract: AM9124 HM6148P-6 m911 CY7C148-25 CY7C148-35 CY7C149-35 CY7C149-45 F2114 F2114-2
Contextual Info: - 24 4 K 7. ít £ Ci Am9114B TAAC max (ns TCAC (ns) TOE max (ns) \ n M 0 S ••/ S t a t i c > TOH rain (ns) TOD max (ns) RAM ft. TWP min (ns) TDS min (ns) 200 200 ( 1 0 2 4 x 4 ) TDH min (ns) T*D min (ns) TWR V D D or V C C (ns) (V) 18 P I N A it?: m

LC3514AL-15

Abstract: HM6148P HM6148LP HM6148P-6 CY2149-35 CY2149-45 LC3514AL15 CY7C148-25 CY7C148-35 CY7C149-25
Contextual Info: - 4 K X m z, it £ C O TAAC max ris TCAC wax (ns) TO E max (ns) A -y TOH min (ns) CMOS y * ? TO D wax (ns) TW P min (ns) S t a t i c 1Í TDS lin (ns) R A M (1 0 2 4 x 4 ) m tí TD H min (ns) T iD min (ns) TWR max (ns) VDD o r VCC (V) ID D max (mA) 5514 1 8 P 1 N

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8