DS285 Search Results

DS377

Contextual Info: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

F300H

Abstract: FC44H BIT137
Contextual Info: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

CP3BT23

Abstract: CP3BT23G18NEP CP3BT23G18NEPNOPB CR16C LMX5251 LMX5252 LQFP-144 315 receiver module
Contextual Info: MAY 2004 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

long rang TRANSMITTER Fm circuit

Abstract: CP3BT23G18AWM CP3BT23G18AWMX CR16C LMX5251 LMX5252 LQFP-144 CP3BT23 SK 01 100 SA F80C
Contextual Info: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA5585025F

Abstract: power transistor gaas x-band CMPA5585025F-TB
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CP3BT23 www.ti.com SNOSCX3A – JULY 2013 – REVISED JANUARY 2014 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Check for Samples: CP3BT23 1 Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for

Contextual Info: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

Contextual Info: CP3BT23 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Literature Number: SNOSAE2D CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

FZT753

Abstract: FZT751 FZT651
Contextual Info: SOT223 PNP SILICON PLANAR M EDIU M POWER TRANSISTOR FEATURES * 2W P O W ER D ISSIPA T IO N . * * 3 A C O N T IN U O U S lc. G U A R A N T E E D H f e SP EC IFIED UP TO 2A. * L O W SA T U R A T IO N VOLTAGE. * C O M P L E M E N T A R Y TYPE - FZT651 P A R T M A R K IN G DETAIL - FZT751

Contextual Info: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: IDT EB-LOGAN-23 Evaluation Board Manual Evaluation Board: 18-691-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

Contextual Info: Not Recommended for New Designs CP3BT23 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Literature Number: SNOSAE2D FEBRUARY 2007 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0

Contextual Info: CP3BT23 www.ti.com SNOSCX3A – JULY 2013 – REVISED JANUARY 2014 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Check for Samples: CP3BT23 1 Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for

Contextual Info: CP3BT23 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Literature Number: SNOSAE2D CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

x-Band Hemt Amplifier

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium