DS30938 Search Results

DMN2004K

Abstract: DMN2004K-7
Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN2004K Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V  Low Gate Threshold Voltage

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage

DMN2004K

Abstract: DMN2004K-7
Contextual Info: SPICE MODEL: DMN2004K DMN2004K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCEDNEW INFORMATION PRODUCT Features • · · · · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage A Low Input Capacitance Dim Min

DMN2004K

Abstract: marking code k1 DMN2004K-7 J-STD-020D
Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

MARKING code NAB

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

MARKING code NAB

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V  Low Gate Threshold Voltage

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching