DS3175 Search Results

Contextual Info: SEPTEMBER 1995 PRELIMINARY INFORMATION DS3175-3.1 SP8910 5.0/5.5GHz ÷ 10 FIXED MODULUS DIVIDER Supersedes September 1993 Edition The SP8910 is one of a range of very high speed low power prescalers for professional and military applications. The dividing elements are static D type flip flops and

Contextual Info: SiG E C P L E S S E Y s r M Ic o N n u i T o h PRELIMINARY INFORMATION s DS3175-3.1 SP8910 5.0/5.5GHZ -I-10 FIXED MODULUS DIVIDER Supersedes September 1993 Edition The SP8910 is one of a range of very high speed low power prescalers for professional and military applications.

Contextual Info: GEC PLESSEY MARCH 1992 SEMICONDUCTORS PRELIMINARY INFORMATION DS3175 1.3 SP8910 5.0/5.5GHz * 10 FIXED MODULUS DIVIDER The SP8910 is one of a range of very high speed low power prescalers for professional and military applications. The dividing elements are static D type flip flops and

Contextual Info: 37bflSS2 D Q l b S M S 4bE D G EC P L E S S E Y S E M I C O N D S GEC PLESSEY T «PLSB MARCH 1992 ISEMICONDUCTORSl PRELIMINARY INFORMATION DS3175 1.3 SP8910 5.0/5.5GHz 10 FIXED MODULUS DIVIDER The SP8910 is on of a range of very high speed low power prescalers for professional and military applications.

DMG6968

Abstract: J-STD-020D 2KV DIODE
Contextual Info: DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low Gate Charge Low RDS ON : • 24mΩ @VGS = 4.5V • 28mΩ @VGS = 2.5V

J-STD-020D

Contextual Info: PD3S230L 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Ultra-Small Surface Mount Package Guard Ring Die Construction for Transient Protection

p4413ls

Contextual Info: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • Low On-Resistance  Low Input Capacitance 7.5mΩ @ VGS = -10V -12A  Fast Switching Speed -10A  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)

Contextual Info: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • Low On-Resistance RDS ON max ID max TA = +25°C  Low Input Capacitance  Fast Switching Speed 7.5mΩ @ VGS = -10V -12A  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 10.2mΩ @ VGS = -4.5V

Contextual Info: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 24m @ VGS = 4.5V • 29m @ VGS = 2.5V • 37m @ VGS = 1.8V Low Gate Threshold Voltage

Contextual Info: PD3S230L Green 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI Mechanical Data Features • • • • • • • • Ultra-Small Surface Mount Package Guard Ring Die Construction for Transient Protection High Surge Capability Lead-Free Finish; RoHS Compliant Notes 1 & 2

Contextual Info: PD3S230H 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Mechanical Data Features • • • • • • • • Ultra-Small Surface Mount Package Guard Ring Die Construction for Transient Protection High Surge Capability Lead Free Finish, RoHS Compliant Note 1

BAV23 SOT143

Abstract: BAV23-7
Contextual Info: BAV23 Features Mechanical Data • • • • • • • • Fast Switching Speed High Reverse Breakdown Voltage Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)

p4413ls

Abstract: DMG4413LSS dmg4413lss13 P4413L P441 J-STD-020D P4413 DS31754 pd top markings DMG4413
Contextual Info: DMG4413LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7.5mΩ @ VGS = -10V • 10.2mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance

pd3s230h-7

Abstract: DS31752 J-STD-020D
Contextual Info: PD3S230H 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Ultra-Small Surface Mount Package Guard Ring Die Construction for Transient Protection

PD3S230LQ-7

Abstract: POWER-DI-323
Contextual Info: PD3S230L Green 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI Features • • • • • • Mechanical Data • • Ultra-Small Surface Mount Package Guard Ring Die Construction for Transient Protection High Surge Capability Lead-Free Finish; RoHS Compliant Notes 1 & 2

Contextual Info: BAV23 Features Mechanical Data • • • • • • • • Fast Switching Speed High Reverse Breakdown Voltage Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)

Contextual Info: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON max ID max TA = 25°C 7.5mΩ @ VGS = -10V -12A 10.2mΩ @ VGS = -4.5V -10A V(BR)DSS • • • • • • N EW PRODU CT -30V Mechanical Data Description and Applications

N9926UD

Contextual Info: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary 24mΩ @ VGS = 4.5V 8A 29mΩ @ VGS = 2.5V 5.5A •     37mΩ @ VGS = 1.8V 4.8A  Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2  Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • Low Gate Charge Low RDS ON : Case Material - Molded Plastic, “Green” Molding 24mΩ @ VGS = 4.5V Compound. UL Flammability Classification Rating 94V-0 ƒ 28mΩ @ VGS = 2.5V

N9926UD

Abstract: DMG9926USD-13 DMG9926USD J-STD-020D
Contextual Info: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 24mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V

J-STD-020D

Abstract: SOT-26
Contextual Info: DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low Gate Charge Low RDS ON : • 24mΩ @VGS = 4.5V • 28mΩ @VGS = 2.5V

P4413

Abstract: p4413ls P4413L
Contextual Info: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = 25°C 7.5mΩ @ VGS = -10V -12A 10.2mΩ @ VGS = -4.5V -10A V(BR)DSS • • • • • • NEW PRODUCT -30V Mechanical Data Description and Applications