DS31775 Search Results

DMN26D0UFB4

Abstract: DMN26D0UFB4-7B "MARKING CODE M1"
Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max

DMN26D0UFB4

Abstract: "MARKING CODE M1" DFN1006H4-3
Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.2V max

DMN26D0UFB4-7B

Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

"MARKING CODE M1"

Abstract: DFN1006H4-3 DMN26D0UFB4
Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V

Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching