DS31784 Search Results
DS31784 Datasheets Context Search
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Contextual Info: DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT -20V Features and Benefits • • • • • • • • • ID RDS(on) TA = 25°C 700mΩ @ VGS = -4.5V -460mA 900mΩ @ VGS = -2.5V -420mA 1300mΩ @ VGS = -1.8V -350mA Low On-Resistance |
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DMG1013T 1300m -460mA -420mA -350mA AEC-Q101 DS31784 | |
DMG1013
Abstract: 504c diode DMG1013T-7 DMG1013T package marking 504c
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DMG1013T AEC-Q101 OT-523 OT-523 J-STD-020 MIL-STD-202, DS31784 621-DMG1013T-7 DMG1013T-7 DMG1013 504c diode DMG1013T-7 DMG1013T package marking 504c | |
DMG1013T
Abstract: High speed switching P-CHANNEL MOSFET SOT-523 DMG1013T-7 DS31784 DMG1013
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DMG1013T AEC-Q101 OT-523 J-STD-020 MIL-STD-202, DS31784 DMG1013T High speed switching P-CHANNEL MOSFET SOT-523 DMG1013T-7 DMG1013 | |
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Contextual Info: DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) -20V • Low On-Resistance TA = +25°C • Low Gate Threshold Voltage • Low Input Capacitance 700mΩ @ VGS = -4.5V -460mA • Fast Switching Speed 900mΩ @ VGS = -2.5V |
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DMG1013T -420mA -350mA -460mA AEC-Q101 1300mÎ DS31784 | |
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Contextual Info: DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS N EW PRODU CT -20V Features and Benefits • • • • • • • • • ID RDS(on) TA = 25°C 700mΩ @ VGS = -4.5V -460mA 900mΩ @ VGS = -2.5V -420mA 1300mΩ @ VGS = -1.8V -350mA Low On-Resistance |
Original |
DMG1013T -420mA 1300mâ -460mA -350mA AEC-Q101 DS31784 |