DS32055 Search Results
DS32055 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DMG4710SSS
Abstract: DMG4710SSS-13
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DMG4710SSS AEC-Q101 DS32055 DMG4710SSS DMG4710SSS-13 | |
DS3205Contextual Info: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency |
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DMG4710SSS AEC-Q101 J-STD-020 DS32055 DS3205 | |
DMG4710SSS
Abstract: DMG4710SSS-13 G471
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Original |
DMG4710SSS AEC-Q101 J-STD-020 DS32055 DMG4710SSS DMG4710SSS-13 G471 | |
DS3205Contextual Info: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency |
Original |
DMG4710SSS AEC-Q101 J-STD-020 DS32055 DS3205 | |
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Contextual Info: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS RDS(on) 30V Features ID max • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses |
Original |
DMG4710SSS DS32055 | |
DMG4710SSS
Abstract: DMG4710SSS-13
|
Original |
DMG4710SSS DS32055 DMG4710SSS DMG4710SSS-13 | |
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Contextual Info: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Product Summary V BR DSS • ID max RDS(on) TA = 25°C (Note 5) 12.5mΩ @ VGS= 10V 11.7A 14.8mΩ @ VGS= 4.5V 10.8A 30V • • • DIOFET utilizes a unique patented process to monolithically |
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DMG4710SSS DS32055 |