DS35068 Search Results
DS35068 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG1026UV 410mA 440mA AEC-Q101 DS35068 | |
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 60V 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V • • • • • • • ID TA = 25°C 440mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG1026UV 440mA 410mA AEC-Q101 OT563 DS35068 | |
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG1026UV 410mA 440mA AEC-Q101 DS35068 | |
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance • Low Input Capacitance 1.8Ω @ VGS = 10V 440mA • Fast Switching Speed 2.1Ω @ VGS = 4.5V 410mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) |
Original |
DMG1026UV 440mA 410mA AEC-Q101 DS35068 | |
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) |
Original |
DMG1026UV AEC-Q101 440mA 410mA DS35068 | |
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG1026UV 410mA 440mA AEC-Q101 DS35068 | |
|
Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG1026UV 440mA 410mA AEC-Q101 DS35068 |