DS35639 Search Results
DS35639 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
n channel mosfet vds max 60v, id max 260maContextual Info: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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DMN65D8LW OT323 260mA 300mA AEC-Q101 DS35639 n channel mosfet vds max 60v, id max 260ma | |
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Contextual Info: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the |
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DMN65D8LW 260mA 300mA AEC-Q101 DS35639 | |
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Contextual Info: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the |
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DMN65D8LW 260mA AEC-Q101 DS35639 | |
DMN65D
Abstract: n channel mosfet vds max 60v, id max 260ma
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DMN65D8LW 260mA 300mA AEC-Q101 DS35639 DMN65D n channel mosfet vds max 60v, id max 260ma |