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    Untitled

    Abstract: No abstract text available
    Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V • • • • • • • • ID TA = 25°C -4.3A -4.0A -2.8A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    PDF DMP2100U AEC-Q101 DS35718

    dmp2100u

    Abstract: 35P marking DMP2100U-7
    Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    PDF DMP2100U AEC-Q101 DS35718 dmp2100u 35P marking DMP2100U-7

    Untitled

    Abstract: No abstract text available
    Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V • • • • • • • • ID TA = 25°C -4.3A -4.0A -2.8A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    PDF DMP2100U AEC-Q101 DS35718