DS5229 Search Results
DS5229 Price and Stock
Microchip Technology Inc CDS5229D-1Voltage Regulator _ DO-35, Projected EOL: 2049-02-05 |
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CDS5229D-1 | 32 Weeks |
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CDS5229D-1 |
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Microchip Technology Inc CDS5229D-1/TRVoltage Regulator _ DO-35, Projected EOL: 2049-02-05 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CDS5229D-1/TR | 32 Weeks |
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CDS5229D-1/TR |
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DS5229 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MITEL BIPOLAR WPC PROCESS WPC is a versatile RF bipolar process providing excellent RF functionality at low cost. Features such as high value poly resistors and nitride capacitors and two layer metal allow low current circuits to be built with high packing densities. |
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polysilicon resistorContextual Info: MITEL BIPOLAR WPC PROCESS WPC is a versatile RF bipolar process providing excellent RF functionality at low cost. Features such as high value poly resistors and nitride capacitors and two layer metal allow low current circuits to be built with high packing densities. |
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125pS polysilicon resistor | |
DS5229Contextual Info: MITEL BIPOLAR HG PROCESS HG is a double-polysilicon trench isolated bipolar process optimised for RF application in the range 900MHz to 2.4GHz. NPN Cross Section Base Collector Emitter P+ P+ base DC epitaxy n- BN CS CS Substrate (p-) fT vs IC min geometry HG NPN |
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900MHz 00E-06 00E-05 00E-04 00E-03 00E-02 300MHz DS5229 | |
TOKO Catalogue
Abstract: an5183 sl1461sa mt8870 ic AN4883 1.5um cmos process family murata saw filter Stand Alone FFT Processor pac dsp 1A212
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1A184A 870nm, 140MHz 850nm, 35MHz 880nm, 45MHz 860nm, 70MHz TOKO Catalogue an5183 sl1461sa mt8870 ic AN4883 1.5um cmos process family murata saw filter Stand Alone FFT Processor pac dsp 1A212 | |
300-pin
Abstract: 300pin msa dwdm TPD-MR-04-XXXXXXXX
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TPD-MR-04-XXXXXXXX 953Gb/s 100GHz 800ps/nm 16-bit 08Mbps TPD-MR-04-XXXXX 95Gbps 10Gbit/s 86-28-8795-8788Fax: 300-pin 300pin msa dwdm TPD-MR-04-XXXXXXXX | |
Contextual Info: MITEL BIPOLAR HG PROCESS HG is a double-polysilicon trench isolated bipolar process optimised for RF application in the range 900MHz to 2.4GHz. NPN Cross Section Base Collector Emitter P+ P+ base DC epitaxy n- BN CS CS Substrate (p-) fT vs IC min geometry HG NPN |
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900MHz 00E-06 00E-05 00E-04 00E-03 00E-02 300MHz 22GHz DS5229 |