DS552 Search Results

CANCELLER

Abstract: TMS 3450 MT93L00A MT93L04 MT93L04A MT93L04AG RP15 wbd4
Contextual Info: MT93L04A 128-Channel Voice Echo Canceller Preliminary Information DS5524 Features • • • • • • MT93L04 is a Multi-chip Module MCM consisting of 4 MT93L00 devices thus providing 128 channels of 64 msec Echo Cancellation. Each device (MT93L00) is independent of the

bi-directional switches IGBT

Abstract: DIM400PBM17-A000
Contextual Info: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

dim800ddm12

Abstract: DIM800DDM12-A000
Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5528-1.1 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIM800DDM12-A000

Abstract: DIM800DDM12-A
Contextual Info: 6 3 Replaces DS5528-4 FEATURES ±0.2 • ±0.2 10µs Short Circuit Withstand 18 6 x O7 Dual Switch IGBT Module DS5528-5 June 2014 LN31688 14 ±0.2 11.5 ±0.2 DIM800DDM12-A000 KEY PARAMETERS 28 ±0.5  High44 Thermal ±0.2 Cycling Capability  Non Punch

DGT305RE

Contextual Info: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5520-4 July 2014 LN31742 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT(AV) 240A • High Voltage Capability dVD/dt 500V/µs ■ Fault Protection Without Fuses diT/dt

DIM800DDM12-A000

Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5528-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

K2667

Contextual Info: MT93L00A Multi-Channel Voice Echo Canceller Preliminary Information Features • • • • • • • • • • • • • • • • • DS5525 Independent multiple channels of echo cancellation; from 32 channels of 64ms to 16 channels of 128ms with the ability to mix

bi-directional switches IGBT

Abstract: DIM800DDM12-A000
Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5528-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5528-3.0 March 2003

DIM2400ESM12-A000

Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003

Contextual Info: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor Replaces February 2002 version, issue DS5520-2.0 DS5520-3.0 July 2004 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT AV 240A • High Voltage Capability dVD/dt 500V/µs

tel 18818

Abstract: TBC 547 B preamplifier at 15 GHz TBC 547 B* TRANSISTOR SL2101 BB555 SL2100 115 ssb lob
Contextual Info: SL2101 Single chip synthesised broadband converter with programmable power DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications

preamplifier at 15 GHz

Abstract: BB555 SL2100 SL2101 30572 ipip3
Contextual Info: SL2101 Synthesised broadband converter with programmable power Datasheet DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications

DIM1800ESM12-A000

Contextual Info: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 April 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DCR840F

Abstract: DCR840F42 DCR840F44 DCR840F46 DCR840F48
Contextual Info: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V ■ High Surge Capability IT AV 840A ITSM 12,500A dVdt* 1000V/µs dI/dt

DS7524

Abstract: DS7524N DS7520N DS5534J DS7528 DS5524J DS7522N DS5534 057524 DS7520
Contextual Info: Magnetic Memory Interface Circuits DS5520/DS7520 Series Dual Core Memory Sense Amplifiers General Description The devices in th is series Features of dual • High speed co re sense am p lifiers co n ve rt b ip o lar m illivolt-level m em o ry ■ G u aran teed n a rro w thresho ld u n c e rta in ty over

Contextual Info: DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 LN26748 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

bi-directional switches IGBT

Abstract: 3,3 kw high frequency transistor module bidirectional switch igbt matrix converter basic ac motor reverse forward electrical diagram DIM400PBM17-A000 DS-5524
Contextual Info: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue June 2002, version DS5524-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

Contextual Info: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V IT AV 840A ITSM 12,500A dVdt* 1000V/µs ■ High Power Converters dI/dt

Contextual Info: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V ■ High Surge Capability IT AV 840A ITSM 12,500A dVdt* 1000V/µs dI/dt

Thyristor 470 A

Abstract: DCR840F DCR840F42 DCR840F44 DCR840F46 DCR840F48
Contextual Info: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V IT AV 840A ITSM 12,500A dVdt* 1000V/µs ■ High Power Converters dI/dt

bi-directional switches IGBT

Abstract: DIM800DDM12-A000 12V15V
Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5528-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5528-3.0 March 2003

Contextual Info: SL2101 Synthesised broadband converter with programmable power Datasheet DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications

BB555

Abstract: SL2100 SL2101 "10297" transformer
Contextual Info: SL2101 Synthesised broadband converter with programmable power Datasheet DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications

LVCMOS18

Abstract: vqg44 AEC-Q100 LVCMOS15 LVCMOS25 LVCMOS33 XA2C32A XAPP427
Contextual Info: XA2C32A CoolRunner-II Automotive CPLD R DS552 v1.1 May 5, 2007 Product Specification Features Description • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade • Guaranteed to meet full electrical specifications over