DUAL FET L6 Search Results
DUAL FET L6 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TC7USB42MU |
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Dual SPDT USB switch, SPDT, UQFN10B, -40 to 85 degC |
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TC74HC123AF |
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CMOS Logic IC, Dual Monostable Multivibrator, SOP16 |
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TCWA1225G |
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High Power Switch / SPDT / WCSP14 |
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TA75W393FU |
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Comparator, Bipolar (393) type Dual Comparator, 2V to 36V, SOT-25 |
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TC7MP3125FT |
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Level shifter, Bidirectional, 2-Bit x 2 Dual Supply Bus Transceiver, TSSOP16B, -40 to 85 degC |
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DUAL FET L6 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single |
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MBD128 BF1206 OT363 R77/01/pp22 | |
AN 7591 POWER AMPLIFIER
Abstract: an 7591 BF1206 an 7591 power amp dual-gate
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MBD128 BF1206 OT363 R77/01/pp22 AN 7591 POWER AMPLIFIER an 7591 BF1206 an 7591 power amp dual-gate | |
transistor 341 20P
Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
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MBD128 BF1206 OT363 SCA75 20p/01/pp21 transistor 341 20P marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier | |
Contextual Info: CXG1150ER Triple Low Noise Amplifier/Dual Mixer For the availability of this product, please contact the sales office. Description The CXG1150ER is a triple low noise amplifier/dual mixer MMIC, which has made through the Sony's GaAs J-FET process. Features |
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CXG1150ER CXG1150ER 15dBm 24-pin 800MHz/1 24PIN VQFN-24P-03 | |
16PIN
Abstract: CXG1082EN GC1210 sony 330
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CXG1082EN CXG1082EN 15dBm 16-pin 16PIN VSON-16P-01 GC1210 sony 330 | |
GP318Contextual Info: CXG1082EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 17dB (LNA Typ.) |
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CXG1082EN CXG1082EN 15dBm 16-pin 800MHz 16PIN VSON-16P-01 GP318 | |
gps l10
Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
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CXG1115AER CXG1115AER VQFN-24P-04 gps l10 24PIN signal amplifier 800 mhz cdma | |
Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) |
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CXG1115AER CXG1115AER VQFN-24P-04 | |
24PIN
Abstract: CXG1118ER GC118
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CXG1118ER CXG1118ER VQFN-24P-03 24PIN GC118 | |
L9150
Abstract: 16PIN CXG1109EN
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CXG1109EN CXG1109EN 16-pin 16PIN VSON-16P-01 L9150 | |
Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features |
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CXG1115ER CXG1115ER 24PIN VQFN-24P-03 | |
3618A
Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
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CXG1118ER CXG1118ER VQFN-24P-03 3618A 24PIN SONY CHOKE cxg1118 | |
gps l10Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features |
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CXG1115ER CXG1115ER 24PIN VQFN-24P-03 gps l10 | |
16PIN
Abstract: CXG1109EN
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CXG1109EN CXG1109EN 16-pin VSON-16P-01 16PIN | |
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ic 810
Abstract: 16PIN CXG1109EN
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CXG1109EN CXG1109EN 16-pin VSON-16P-01 ic 810 16PIN | |
24PIN
Abstract: CXG1150ER
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CXG1150ER CXG1150ER 15dBm 24-pin 800MHz/1 VQFN-24P-03 24PIN | |
24PIN
Abstract: CXG1115ER
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CXG1115ER CXG1115ER VQFN-24P-03 24PIN | |
pj 989
Abstract: dual fet L6 PJ 3236 1000J CFK0301 CFK0301-AK-0000 CFK0301-AK-000T Scans-00553
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OCR Scan |
CFK0301 CFK0301 pj 989 dual fet L6 PJ 3236 1000J CFK0301-AK-0000 CFK0301-AK-000T Scans-00553 | |
a210701e
Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
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PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 a210701e 1K capacitor lm 2094 BCP56 LM7805 RO4350 | |
Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier |
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PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 214bstances. | |
PTFA210701E
Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
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PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 BCP56 LM7805 RO4350 elna 50v lm 2094 | |
Contextual Info: SSLERITSK P ro d u c t S p e c ific a tio n s A p ril 1 9 9 8 1 o f 4 CFK0301 High Dynamic Range Dual, Low-Noise GaAs FET Features □ Dual 600 jim GaAs FETs in a Single Package □ Guaranteed Low-Noise Figure: 0.8 to 2.0 GHz □ Excellent Gain and Phase Matching |
OCR Scan |
CFK0301 CFK0301 | |
Contextual Info: CXG1097EN Low Noise Amplifier with Bypass Switch/Mixer Description The CXG1097EN is a dual mode low noise amplifier with a bypass switch/ mixer MMIC for Japan CDMA cellular. This IC is designed using the Sony's GaAs J-FET process. 16 pin VSON Plastic Features |
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CXG1097EN CXG1097EN 16-pin 16PIN VSON-16P-01 | |
16PIN
Abstract: CXG1097EN
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CXG1097EN CXG1097EN 16-pin 16PIN VSON-16P-01 |