Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DUAL FET L6 Search Results

    DUAL FET L6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC7USB42MU
    Toshiba Electronic Devices & Storage Corporation Dual SPDT USB switch, SPDT, UQFN10B, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC74HC123AF
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Dual Monostable Multivibrator, SOP16 Visit Toshiba Electronic Devices & Storage Corporation
    TCWA1225G
    Toshiba Electronic Devices & Storage Corporation High Power Switch / SPDT / WCSP14 Visit Toshiba Electronic Devices & Storage Corporation
    TA75W393FU
    Toshiba Electronic Devices & Storage Corporation Comparator, Bipolar (393) type Dual Comparator, 2V to 36V, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TC7MP3125FT
    Toshiba Electronic Devices & Storage Corporation Level shifter, Bidirectional, 2-Bit x 2 Dual Supply Bus Transceiver, TSSOP16B, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    DUAL FET L6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    MBD128 BF1206 OT363 R77/01/pp22 PDF

    AN 7591 POWER AMPLIFIER

    Abstract: an 7591 BF1206 an 7591 power amp dual-gate
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    MBD128 BF1206 OT363 R77/01/pp22 AN 7591 POWER AMPLIFIER an 7591 BF1206 an 7591 power amp dual-gate PDF

    transistor 341 20P

    Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    MBD128 BF1206 OT363 SCA75 20p/01/pp21 transistor 341 20P marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier PDF

    Contextual Info: CXG1150ER Triple Low Noise Amplifier/Dual Mixer For the availability of this product, please contact the sales office. Description The CXG1150ER is a triple low noise amplifier/dual mixer MMIC, which has made through the Sony's GaAs J-FET process. Features


    Original
    CXG1150ER CXG1150ER 15dBm 24-pin 800MHz/1 24PIN VQFN-24P-03 PDF

    16PIN

    Abstract: CXG1082EN GC1210 sony 330
    Contextual Info: CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process.


    Original
    CXG1082EN CXG1082EN 15dBm 16-pin 16PIN VSON-16P-01 GC1210 sony 330 PDF

    GP318

    Contextual Info: CXG1082EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 17dB (LNA Typ.)


    Original
    CXG1082EN CXG1082EN 15dBm 16-pin 800MHz 16PIN VSON-16P-01 GP318 PDF

    gps l10

    Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
    Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)


    Original
    CXG1115AER CXG1115AER VQFN-24P-04 gps l10 24PIN signal amplifier 800 mhz cdma PDF

    Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)


    Original
    CXG1115AER CXG1115AER VQFN-24P-04 PDF

    24PIN

    Abstract: CXG1118ER GC118
    Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original
    CXG1118ER CXG1118ER VQFN-24P-03 24PIN GC118 PDF

    L9150

    Abstract: 16PIN CXG1109EN
    Contextual Info: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


    Original
    CXG1109EN CXG1109EN 16-pin 16PIN VSON-16P-01 L9150 PDF

    Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original
    CXG1115ER CXG1115ER 24PIN VQFN-24P-03 PDF

    3618A

    Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
    Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original
    CXG1118ER CXG1118ER VQFN-24P-03 3618A 24PIN SONY CHOKE cxg1118 PDF

    gps l10

    Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original
    CXG1115ER CXG1115ER 24PIN VQFN-24P-03 gps l10 PDF

    16PIN

    Abstract: CXG1109EN
    Contextual Info: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


    Original
    CXG1109EN CXG1109EN 16-pin VSON-16P-01 16PIN PDF

    ic 810

    Abstract: 16PIN CXG1109EN
    Contextual Info: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


    Original
    CXG1109EN CXG1109EN 16-pin VSON-16P-01 ic 810 16PIN PDF

    24PIN

    Abstract: CXG1150ER
    Contextual Info: CXG1150ER Triple Low Noise Amplifier/Dual Mixer Description The CXG1150ER is a triple low noise amplifier/dual mixer MMIC, which has made through the Sony's GaAs J-FET process. Features • 3V single power supply operation • 3-pin control by the on-chip logic circuit


    Original
    CXG1150ER CXG1150ER 15dBm 24-pin 800MHz/1 VQFN-24P-03 24PIN PDF

    24PIN

    Abstract: CXG1115ER
    Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original
    CXG1115ER CXG1115ER VQFN-24P-03 24PIN PDF

    pj 989

    Abstract: dual fet L6 PJ 3236 1000J CFK0301 CFK0301-AK-0000 CFK0301-AK-000T Scans-00553
    Contextual Info: -CELEKITEÊf Product S pecifications A pril 1998 1 o f 4 CFK0301 High Dynamic Range Dual, Low-Noise GaAs FET Features □ Dual 600 jim GaAs FETs in a Single Package □ Guaranteed Low-Noise Figure: 0.8 to 2.0 GHz □ Excellent Gain and Phase Matching


    OCR Scan
    CFK0301 CFK0301 pj 989 dual fet L6 PJ 3236 1000J CFK0301-AK-0000 CFK0301-AK-000T Scans-00553 PDF

    a210701e

    Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
    Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original
    PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 a210701e 1K capacitor lm 2094 BCP56 LM7805 RO4350 PDF

    Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original
    PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 214bstances. PDF

    PTFA210701E

    Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
    Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original
    PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 BCP56 LM7805 RO4350 elna 50v lm 2094 PDF

    Contextual Info: SSLERITSK P ro d u c t S p e c ific a tio n s A p ril 1 9 9 8 1 o f 4 CFK0301 High Dynamic Range Dual, Low-Noise GaAs FET Features □ Dual 600 jim GaAs FETs in a Single Package □ Guaranteed Low-Noise Figure: 0.8 to 2.0 GHz □ Excellent Gain and Phase Matching


    OCR Scan
    CFK0301 CFK0301 PDF

    Contextual Info: CXG1097EN Low Noise Amplifier with Bypass Switch/Mixer Description The CXG1097EN is a dual mode low noise amplifier with a bypass switch/ mixer MMIC for Japan CDMA cellular. This IC is designed using the Sony's GaAs J-FET process. 16 pin VSON Plastic Features


    Original
    CXG1097EN CXG1097EN 16-pin 16PIN VSON-16P-01 PDF

    16PIN

    Abstract: CXG1097EN
    Contextual Info: CXG1097EN Low Noise Amplifier with Bypass Switch/Mixer Description The CXG1097EN is a dual mode low noise amplifier with a bypass switch/ mixer MMIC for Japan CDMA cellular. This IC is designed using the Sony's GaAs J-FET process. 16 pin VSON Plastic Features


    Original
    CXG1097EN CXG1097EN 16-pin 16PIN VSON-16P-01 PDF