DUAL MOSFET 463 Search Results

Contextual Info: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD -91865A International i R Rectifier IRF7555 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Voss = -20V Ftas(on) = 0.055D

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF5850

Contextual Info: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF7328

Contextual Info: PD -94000 IRF7328 HEXFET Power MOSFET ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from

IRF7901D1

Contextual Info: PD - 93844 IRF7901D1 PROVISIONAL DATASHEET Dual FETKYTM • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier

IRF7342

Contextual Info: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l VDSS = -55V RDS on = 0.105Ω Fifth Generation HEXFETs from International Rectifier

IPS042G

Contextual Info: Preliminary Data Sheet No.PD 60153-G IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • · · · · Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS042G is a fully protected dual low side SMART

4.5v to 100v input regulator

Contextual Info: PD -94030 IRF7752 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS 30V RDS(on) max ID 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A Description HEXFET® power MOSFETs from International Rectifier

Contextual Info: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V

EIA-541

Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

IRF7509

Contextual Info: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T

IRF7342

Contextual Info: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V

p-channel 250V 30A power mosfet

Contextual Info: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.055W

IRF7341

Abstract: IRF7341 application note
Contextual Info: PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V

diode 838

Abstract: ST 7702 irf 439
Contextual Info: PD - 94001 IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 18mΩ@VGS = -10V 30mΩ@VGS = -4.5V -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier

IRF7509

Abstract: IRF7509P 91270j IRF7509N
Contextual Info: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T

IRF7750

Contextual Info: PD - 93848A IRF7750 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -20V RDS(on) = 0.030Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

IRF7324

Contextual Info: PD -93799A IRF7324 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.1mm Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.018Ω

Contextual Info: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -20V RDS(on) = 0.055Ω

IRF7507

Abstract: f7501
Contextual Info: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8

IRF7507

Contextual Info: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8

IRF7507

Contextual Info: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8

13A40

Contextual Info: PD-93760 IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω