DUAL MOSFET 606 Search Results

Contextual Info: LF PA K 56D BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to

lcd inverter n mosfet cross reference

Abstract: dc power supply mbr10100ct Schottky diode MBR30100CT ZXGD3101 mosfet 3918 3918 MOSFET mosfet 4800 circuit DN-90 40W flyback transformer High voltage smps transformer for lcd display
Contextual Info: A Product Line of Diodes Incorporated DN90 ZXGD3101 Synchronous MOSFET controller improves energy efficiency of dual-output power supply Yong Ang, Applications Engineer, Diodes Incorporated Introduction This design note addresses the challenge of applying Synchronous Rectification on dual-outputs

Contextual Info: Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET ADP2323 Data Sheet TYPICAL APPLICATION CIRCUIT FEATURES GENERAL DESCRIPTION The ADP2323 is a full featured, dual output, step-down dc-todc regulator based on current-mode architecture. The ADP2323

ADP2323

Abstract: FDS8880 CDRH105RNP-1R5N M200 M400 ADP2323-EVALZ SW111
Contextual Info: Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET ADP2323 FEATURES The ADP2323 is a full featured, dual output, step-down dc-todc regulator based on current-mode architecture. The ADP2323 integrates two high-side power MOSFETs and two low-side drivers

ADP2323

Abstract: 4.7uF 110V X7R fds8880
Contextual Info: Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET ADP2323 Data Sheet FEATURES GENERAL DESCRIPTION The ADP2323 is a full featured, dual output, step-down dc-todc regulator based on current-mode architecture. The ADP2323 integrates two high-side power MOSFETs and two low-side drivers

Contextual Info: YR40.241 12-28V, 40A, DUAL REDUNDANCY MODULE Y-Series MOSFET REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Dual Input with Single Output Suitable for all Power Supplies Only 72mV Voltage Drop at 20A Output Current

Contextual Info: YR80.241 12-28V, 80A, DUAL REDUNDANCY MODULE Y-Series MOSFET REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Dual Input with Single Output Suitable for all Power Supplies Only 50mV Voltage Drop at 40A Output Current

Contextual Info: Ordering number : ENA1456A ECH8671 P-Channel Power MOSFET http://onsemi.com –12V, –3.5A, 77mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1465A ECH8672 P-Channel Power MOSFET http://onsemi.com –20V, –3.5A, 85mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: NTHD4401P Power MOSFET 20 V, Dual P−Channel, 2.1 A, ChipFET] Features • Low RDS on and Fast Switching Speed in a ChipFET Package • Leadless ChipFET Package 40% Smaller Footprint than TSOP−6 • ChipFET Package with Excellent Thermal Capabilities where Heat

Contextual Info: Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Dual ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Dual 1 A, 18 V, Synchronous Step-Down Regulator with Fail-Safe Voltage Monitoring ADP2311 Data Sheet TYPICAL APPLICATION CIRCUIT Input voltage: 4.5 V to 18 V ±1.0% output accuracy Integrated MOSFET: 110 mΩ/60 mΩ typical Continuous output current: 1 A/1 A

SLUP169

Abstract: Pulse Transformer application Design And Application Guide For High Speed MOSFET AN-6069 mosfet discrete totem pole drive CIRCUIT ic pwm a 6069 AN6069 pulse transformer circuit AN9010 mosfet discrete totem pole CIRCUIT
Contextual Info: www.fairchildsemi.com AN-6069 Application Review and Comparative Evaluation of Low-Side Gate Drivers Summary Power MOSFETs require a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals necessary to control the MOSFET. This paper

smd transistor marking y2

Abstract: catalog mosfet Transistor smd HERMETIC SMD OPTOCOUPLERS military optocoupler 8 channel optocouplers smd INCOMING INSPECTION procedure smd transistor marking hp
Contextual Info: H Hermetic and Hi-Rel Optocouplers Data Sheet Index . 1-492 Product Selection Guide . 1-493 Applications . 1-606 1-489 1-489 Hermetic and Hi-Rel Optocouplers For Military, Space, Life

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Acid Battery charger 48 volt circuit tl494

Abstract: uc3845 lead acid battery charger tl494 buck dc/dc converter UC3524 SYNC BUCK uc3843 step down uc3842 unitrode 100 watt 48v 2.5a charger using uc3842 24v input 5v output regulator 500 watt power circuit diagram uc3825 uc3842 dc/dc converter 24v application circuits
Contextual Info: Selection Guide EIGHTH EDITION Analog/Mixed-Signal Products Designer’s Master Selection Guide Power Management Products August 2002 1996, 1997, 1999, 2000, 2001, 2002 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,

converter dc-dc 24v to 12v tl494

Abstract: UCC2802-Q1 uc3846 push-pull DC-dc converter TL494 push-pull DC-dc converter 48 VOLT 20AMP battery charger UC2854 48V IN 12V OUT tl494 uc2843 motor control UCC2804-Q1 uc3843 step down
Contextual Info: NINTH EDITION Analog Master Selection Guide October 2003 Power Management Products 1996, 1997, 1999, 2000, 2001, 2002, 2003 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,

SMD Capacitor product

Abstract: SC4 TRANSISTOR SMD 1x2 pin header 2.54mm pitch MOSFET C65 Multicomp DIODE SMD 1206 philips make transistor smd R55 6061-EV1-REV1 KP-2012MGC microSMD035F-2
Contextual Info: 6061-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6061-EV1 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8711/8731/8951 DATE: January 2008 DOC REVISION: Rev 1.1 Customer Information 1 January 2008, Rev 1.1 6061-EV1-REV1 Schematic and Layout

Contextual Info: PRELIMINARY YRH40.481 24-56V, 40A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes

MOSFET Module 24v 1000A

Contextual Info: PRELIMINARY YRH40.241 12-28V, 40A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes

Contextual Info: PRELIMINARY YRH80.241 12-28V, 80A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes

TPS1120

Abstract: TPS1120D TPS1120DR TPS1120Y Dual MOSFET 606
Contextual Info: TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 D D D D D D Low rDS on . . . 0.18 Ω at VGS = – 10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = – 1.5 V Max

a476

Abstract: TPS1120 TPS1120D TPS1120DR TPS1120Y
Contextual Info: TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 • • • • • • Low rDS on . . . 0.18 Ω at VGS = – 10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = – 1.5 V Max

siemens automotive relay dc 12v

Abstract: Bsp78
Contextual Info: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high