DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Search Results

Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V spn4946
Contextual Info: SPN4946 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

SPN4972B

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 SPN4972BS8RGB
Contextual Info: SPN4972B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

Contextual Info: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

spn4910

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET
Contextual Info: SPN4910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

Contextual Info: ACE4884 N-Channel Enhancement Mode MOSFET Description The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly

4920n

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
Contextual Info: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

Contextual Info: AP4226AGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance BVDSS 30V ▼ Simple Drive Requirement RDS ON 18mΩ ▼ Dual N MOSFET Package ID 8.7A ▼ Halogen Free & RoHS Compliant Product

Contextual Info: DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

Contextual Info: DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

9N65

Abstract: DMG9N DMG9N65CT 9N65CT
Contextual Info: DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

650VVGS

Contextual Info: DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

Contextual Info: DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

CHM4269JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts CHM4269JGP CURRENT 6.1 Ampere CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.

Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts CHM4269JPT CURRENT 6.1 Ampere CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.

AP4226GM

Contextual Info: AP4226GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement D2 D2 D1 D1 ▼ Dual N MOSFET Package S1 30V RDS ON 18mΩ ID G2 S2 SO-8 BVDSS 8.2A G1 Description

Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4

Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet LT4948C lt494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V LT4948C-G
Contextual Info: LT4948C -G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4948C is the Dual N-Channel logic enhancement mode power ● RDS(ON)≦53 mΩ@VGS=10V field effect transistors, using high cell density, DMOS trench ● RDS(ON)≦78 mΩ@VGS=4.5V

AP4226AGM

Contextual Info: AP4226AGM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 18mΩ ID 8.7A G2 S2 ▼ RoHS Compliant SO-8

DMG9N65CT

Contextual Info: DMG9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description •      This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

Contextual Info: AP6902GH-HF Preliminary Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS Fast Switching Performance RDS ON Two Independent Device ID 30V 10m 42A Halogen Free & RoHS Compliant Product Description

Contextual Info: AP4226GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement D2 D2 D1 D1 ▼ Dual N MOSFET Package ▼ RoHS Compliant SO-8 G1 S1 BVDSS 30V RDS ON 18mΩ ID G2 S2

Contextual Info: AP4226AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement D1 D2 RDS ON D1 Dual N MOSFET Package S1 G1 18m ID G2 SO-8 30V 8.7A S2 Description D2 D1 Advanced Power MOSFETs from APEC provide the

lt494

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
Contextual Info: LT4948C -G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4948C is the Dual N-Channel logic enhancement mode power ● RDS(ON)≦53 mΩ@VGS=10V field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to

Contextual Info: AP9960AGM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS Simple Drive Requirement RDS ON Fast Switching Characteristic ID 40V 16m 8.7A Halogen Free & RoHS Compliant Product D2

AP4226M

Contextual Info: AP4226M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement D2 D2 D1 D1 ▼ Dual N MOSFET Package S1 30V RDS ON 18mΩ ID G2 S2 SO-8 BVDSS 8.2A G1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the