9N65 Search Results
9N65 Price and Stock
onsemi FCMT099N65S3MOSFET N-CH 650V 30A POWER88 |
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FCMT099N65S3 | Digi-Reel | 2,685 | 1 |
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FCMT099N65S3 | Cut Tape | 1 |
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FCMT099N65S3 | 4,393 | 1 |
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FCMT099N65S3 | 3,000 |
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FCMT099N65S3 | 18 Weeks | 3,000 |
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FCMT099N65S3 | 19 Weeks | 3,000 |
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FCMT099N65S3 | 24,000 |
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FCMT099N65S3 | 185 | 1 |
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onsemi NVB099N65S3SF3 650V EASY 99MOHM D2PAK AUTO |
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NVB099N65S3 | Digi-Reel | 1,481 | 1 |
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NVB099N65S3 | Reel | 18 Weeks | 800 |
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NVB099N65S3 | 1,560 |
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NVB099N65S3 | 696 | 1 |
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NVB099N65S3 | 800 |
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NVB099N65S3 | 19 Weeks | 800 |
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NVB099N65S3 | 3,200 |
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onsemi FCP099N65S3MOSFET N-CH 650V 30A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCP099N65S3 | Tube | 780 | 1 |
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FCP099N65S3 | Tube | 18 Weeks | 800 |
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FCP099N65S3 | 762 |
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FCP099N65S3 | Bulk | 1,355 | 1 |
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FCP099N65S3 | 800 |
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FCP099N65S3 | 10,816 |
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FCP099N65S3 | 200 | 19 Weeks | 50 |
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FCP099N65S3 | 5,650 |
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FCP099N65S3 | 5,920 | 1 |
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STMicroelectronics STD9N65M2MOSFET N-CH 650V 5A DPAK |
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STD9N65M2 | Digi-Reel | 672 | 1 |
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STD9N65M2 | Reel | 14 Weeks | 2,500 |
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STD9N65M2 | Cut Tape | 1,485 | 1 |
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STD9N65M2 | 1 |
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STD9N65M2 | 1 |
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STD9N65M2 | 7,500 |
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STD9N65M2 | 2,500 | 15 Weeks | 2,500 |
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STD9N65M2 | 15 Weeks | 2,500 |
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Infineon Technologies AG IKP39N65ES5XKSA1IGBT TRENCH FS 650V 62A TO220-3 |
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IKP39N65ES5XKSA1 | Tube | 485 | 1 |
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IKP39N65ES5XKSA1 | Tube | 19 Weeks | 500 |
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IKP39N65ES5XKSA1 | 1,029 |
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IKP39N65ES5XKSA1 | Bulk | 128 | 1 |
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IKP39N65ES5XKSA1 | 296,500 | 1 |
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IKP39N65ES5XKSA1 | Tube | 100 | 0 Weeks, 1 Days | 1 |
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IKP39N65ES5XKSA1 | 1,000 | 20 Weeks | 500 |
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IKP39N65ES5XKSA1 | 1,000 | 1 |
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9N65 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 9N65K-MT Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
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9N65K-MT 9N65K-MT QW-R205-017 | |
618 MOSFETContextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
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O-220 QW-R502-618 618 MOSFET | |
9N65
Abstract: 618 MOSFET MOSFET 618 9A650V 618 diode
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QW-R502-618 9N65 618 MOSFET MOSFET 618 9A650V 618 diode | |
9N65
Abstract: DMG9N DMG9N65CT 9N65CT
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DMG9N65CT O-220AB AEC-Q101 O-220AB, DS35619 9N65 DMG9N DMG9N65CT 9N65CT | |
650VVGSContextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
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DMG9N65CTI ITO-220AB AEC-Q101 DS36027 650VVGS | |
Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
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DMG9N65CTI ITO-220AB AEC-Q101 DS36027 | |
LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
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IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6 | |
Contextual Info: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE 9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1) |
OCR Scan |
0000L IXTE9N65X4 | |
DMG9N65CTContextual Info: 9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
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DMG9N65CT O-220AB AEC-Q101 DS35619 DMG9N65CT | |
Contextual Info: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
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DMG9N65CT O-220AB AEC-Q101 DS35619 | |
Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
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DMG9N65CTI ITO-220AB AEC-Q101 DS36027 |