DUAL P-CHANNEL 2.5-V G-S MOSFET Search Results
DUAL P-CHANNEL 2.5-V G-S MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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| TK065U65Z |
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MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL |
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| TK5R1P08QM |
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK |
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| TK190E65Z |
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N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ |
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| TK090U65Z |
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MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL |
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DUAL P-CHANNEL 2.5-V G-S MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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RESISTANCE11Contextual Info: T e m ic SÌ9529DY Semiconductors Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) N-Channel 20 P-Channel -12 rDS(on) (Q ) 0.03 @VGS = 4.5 V 0.04 @ VGS = 2.5 V 0.05 @ Vqs = -4-5 V 0.074 @VGS =-2.5 V I d (A) ±6 ±5.2 ±5 ±4.1 1.5-^ |
OCR Scan |
9529DY S-49520--Rev. 18-Dec-96 S-49520---Rev. RESISTANCE11 | |
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Contextual Info: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2 |
OCR Scan |
Si6963DQ 25Source S-53246â 26-May-97 | |
Si9529DYContextual Info: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 |
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Si9529DY S-49520--Rev. 18-Dec-96 | |
Si9529DYContextual Info: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 |
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Si9529DY 18-Jul-08 | |
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Contextual Info: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 |
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Si9529DY 08-Apr-05 | |
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Contextual Info: Temic SÌ6562DQ S e m i c o n d u c t o r s Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) N-Cbannel 20 P-Channel 20 «t)S(on) (Q ) I d (A) 0.030 @ Vos = 4.5 V ±4.5 0.040 @ VGS = 2.5 V ±3.9 0.050 @ VGs = -4.5 V ±3.5 0.085 @ VGS = -2.5 V |
OCR Scan |
6562DQ S-54711-- 27-Oct-97 S-54711--Rev. | |
S-49534
Abstract: Si6943DQ
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Si6943DQ 18-Jul-08 S-49534 | |
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Contextual Info: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 S TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6943DQ G 6 S2 5 G2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si6943DQ 08-Apr-05 | |
gfr DIODEContextual Info: T E M IC SÌ9934DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V ) 12 r DS(on) (£2) I d (A ) 0.05 @ VGS = -4.5 V 0.074 @ VGs = -2.5 V ±5 ±4.1 SO-8 Gi Top View Di Di D'2 D 2 P-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted) |
OCR Scan |
9934DY 150QC S-49532--Rev. 02-Feb-98 gfr DIODE | |
Si4562DY
Abstract: SI4562
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Original |
Si4562DY S-54940--Rev. 29-Sep-97 SI4562 | |
S-54711
Abstract: Si6562DQ 54711
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Si6562DQ S-54711--Rev. 27-Oct-97 S-54711 54711 | |
Si4562DYContextual Info: Si4562DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5.0 D1 D1 S2 SOĆ8 S1 1 8 |
Original |
Si4562DY S-54940--Rev. 29-Sep-97 | |
Si9529DYContextual Info: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 S2 SO-8 S1 1 8 D1 G1 2 |
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Si9529DY S-49520--Rev. 18-Dec-96 | |
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Contextual Info: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si6943DQ S-49534--Rev. 06-Oct-97 | |
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Contextual Info: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
Original |
Si6943DQ S-49534--Rev. 06-Oct-97 | |
S-49534
Abstract: Si6943DQ
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Si6943DQ S-49534--Rev. 06-Oct-97 S-49534 | |
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Contextual Info: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V (B R ) D S S M i n ( V ) r D S (o n ) Max ( Q ) Id (A) V G S (th )(V ) N-Channel 30 1 @ VGS= 12V 0.8 to 2.5 0.85 P-C hannel -3 0 2 @ Vq s » -1 2 V - 2 to -4 .5 -0 .6 FEATURES |
OCR Scan |
VQ3001J/P S-04279-- 16-Jul-01 16-Ju | |
s8105
Abstract: SI6943
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Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8105 SI6943 | |
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Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available |
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Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 08-Apr-05 | |
Si6943BDQContextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available |
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Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 18-Jul-08 | |
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Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available |
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Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available |
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Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available |
Original |
Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 11-Mar-11 | |
s26dContextual Info: T E M IC SÌ9926DY Semiconductors Dual N-Channel 2.5-V G-S Rated MOSFET P rod uct S u m m a r y v DS(V) 20 r DS(on) (£2) I d (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ Vos = 2.5 V ±5.2 Di D 2 D2 Di U S O -8 u Gi Ô Top View Ô S2 Si N-Channel MOSFET N-Channel MOSFET |
OCR Scan |
9926DY S-49532-- 02-Feb-98 s26d | |