Si6943BDQ
Abstract: Si6943DQ Si6943DQ-T1
Text: Specification Comparison Vishay Siliconix Si6943BDQ vs. Si6943DQ Description: Dual P-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6943BDQ-T1 Replaces Si6943DQ-T1 Si6943BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6943DQ-T1
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Si6943BDQ
Si6943DQ
Si6943BDQ-T1
Si6943DQ-T1
Si6943BDQ-T1-E3
10-Nov-06
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Si6943DQ
Abstract: No abstract text available
Text: Si6943DQ Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -12 rDS(on) (W) ID (A) 0.10 @ VGS = -4.5 V "2.5 0.18 @ VGS = -2.5 V "1.9 S TSSOPĆ8 D1 S1 S1 G1 1 2 D 3 8 Si6943DQ 4 7 6 5 G D2 S2 S2 G2 Top View D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S45252Rev.
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Si6943DQ
Abstract: No abstract text available
Text: Si6943DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S-47958--Rev.
15-Apr-96
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Si9934DY
Abstract: Si6943DQ Si9933ADY
Text: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1
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Si9933ADY
Si9934DY
Si6943DQ
S-51359--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S-49534--Rev.
06-Oct-97
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temic mosfet
Abstract: No abstract text available
Text: DOC. NO. 05CB-000343 PART NO. 0505-001037 TEMIC Si6943DQ Siliconix Dual P-Channel Enhancement-Mode MOSFET Product Summary TSSOP-8 Top View P-Channel MOSFET Absolute Maximum Ratings TA = 25oC Unless Otherwise Noted Thermal Resistance Ratings Notes a. Surface Mounted on FR4 Board, t
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05CB-000343
Si6943DQ
S-45252---Rev.
S-45252--Rev.
temic mosfet
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Si6943DQ
Abstract: Si9933ADY Si9934DY
Text: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1
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Si9933ADY
Si9934DY
Si6943DQ
51359--Rev.
18-Dec-96
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S-49534
Abstract: Si6943DQ
Text: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 S TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6943DQ G 6 S2 5 G2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si6943DQ
18-Jul-08
S-49534
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Untitled
Abstract: No abstract text available
Text: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S-49534--Rev.
06-Oct-97
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P Si6943DQ
Text: Si6943DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6943DQ
2502P
CBHK741B019
F63TNR
FDW2502P
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Si9934DY
Abstract: P-channel power mosfet SO-8 Si6943DQ Si9933DY S-47590
Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ
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Si9933DY
Si9934DY
Si6943DQ
S-47590--Rev.
30-Apr-96
P-channel power mosfet SO-8
S-47590
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S-49534
Abstract: Si6943DQ
Text: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6943DQ G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si6943DQ
S-49534--Rev.
06-Oct-97
S-49534
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MS-4075
Abstract: Si6943DQ Si9933DY Si9934DY
Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ
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Si9933DY
Si9934DY
Si6943DQ
S-47590--Rev.
30-Apr-96
MS-4075
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Si6943DQ
Abstract: Si9933DY Si9934DY MS-4075
Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1 S2 SO-8
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Si9933DY
Si9934DY
Si6943DQ
S-47590--Rev.
30-Apr-96
MS-4075
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Si6943DQ
Abstract: No abstract text available
Text: Si6943DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6943DQ
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Untitled
Abstract: No abstract text available
Text: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 S TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6943DQ G 6 S2 5 G2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si6943DQ
08-Apr-05
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Si6943DQ
Abstract: No abstract text available
Text: Si6943DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S-47958--Rev.
15-Apr-96
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S-49534
Abstract: Si6943DQ
Text: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S-49534--Rev.
06-Oct-97
S-49534
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MAX232 G4
Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
Text: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9
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MPC555
TP102
TP103
CB100
TP100
TP101
CO101
MAX232-6
MAX232-2
MAX232-13
MAX232 G4
IC404
IC808
ic401
diode C728
diode c729
transistor C721
IC818
ic811
C729
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bq2903
Abstract: schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh
Text: U-512 Using the bq2902/3 Rechargeable Alkaline ICs As a result, alkaline cells provide lower effective capacity at higher discharge currents. Introduction The bq2902 and bq2903 ICs manage rechargeable alkalines such as the Renewal cells from Rayovac®. These
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U-512
bq2902/3
bq2902
bq2903
bq2902
schematic diagram 12V battery charger regulator
TIP42 Application Note
rayovac aaa rechargeable
diode 1N4001 specifications
rechargeable battery DOD
alkaline battery charger
2N4403 diagram
Rayovac aa nimh
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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Untitled
Abstract: No abstract text available
Text: LTC1522 Micropower, Regulated 5V Charge Pump DC/DC Converter U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultralow Power: Typical Operating ICC = 6µA Short-Circuit/Thermal Protected Regulated 5V ±4% Output Voltage 2.7V to 5V Input Range
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LTC1522
700kHz
LTC1522
LTC1516
LTC1517-5
OT-23
LTC1555/56
LTC660
100mA
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VDS16
Abstract: D-16 Si6943DQ Si9934DY 5121 M
Text: Tem ic SÌ9933DY S e m i c o n d u c t o r s Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V -20 r DS(on) (£2) I d (A) 0.11 @ VGs = -+-5 v ±3.4 0.15 @VGS =-3.0 V ±2.9 0.19 @ VGs = -2.7 V ±2.6 Recommended upgrade: Si9934DY Lower profile/smaller size— see LITE FOOT equivalent: Si6943DQ
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9933dy
Si9934DY
Si6943DQ
S-47590â
30-Apr-96
25473S
DD17flflti
VDS16
D-16
5121 M
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