DY 255 Search Results

han e* harting

Contextual Info: Alle Hechle Vorbehalten/ i l l rights resemi k A LO CD -rh 1 i 1 Î 58 X 2:1 All Diiensions In • Original Size D U k k Nicht tolerierte halle/Free siie telenms Techn. Character. Dat. Detail. Insp. 4U242 1 6 . 1 0 . 0 8 Bor 410013 05.05.03 DY 25558 Mod .

GM7IC4256A/AL-80

Contextual Info: GM71C4256A/AL GoldStar 262,144 WORDSx 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4256A/AL is the new generation dy­ • 262,1 4 4 x 4 Bit Organization namic RAM organized 262,144 x 4 Bit. GM71C- • Fast Page Mode Capability

514256ALP

Abstract: HM514256A hm514256 HM514256ALP-8
Contextual Info: HM514256ALP/ALJP/ALZP-8/10/12 — Preliminary 262,144-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi HM514256ALP/AUP/ALZP family is a CMOS dy­ namic RAM organized 262,144-word x 4-bit. HM514256ALP/AUP/ ALZP has realized higher density, higher performance and various

GM7IC4256A/AL-70

Abstract: GM7IC4256A/AL-80
Contextual Info: GM71C4256A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A/AL is the new generation dy­ namic RAM organized 262,144 x 4 Bit. GM71C4256AJAL has realized higher density, higher per­ formance and various functions by utilizing ad­

M22520/3-1

Abstract: M22520/7-01 MH86164G VG95234 31 vg 95234 tooling VG 95234 G DATA SHEET MH860 P69K VGE10077A RX2025GE1
Contextual Info: new 69K / IP y 8 6 IP spra alt mic s a r able n t h Dy oun 00 5 m r to inte Up 234 5 9 VG UTV Ruggedized reverse bayonet connectors Completely intermountable with VG 95234 : the MS 5015 reverse bayonet connectors Description This connector series is an enhanced

Contextual Info: |dy Irtegiated. Dev xe TechnoJogy, lie . CMOS Triple Bus SyncFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1 , 02 4 x3 6 x 2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: There are two errata notices at the end of this data sheet. The corrections have already been incorporated

Contextual Info: |dy Integrated D ev jce Technology, lie . CMOS Triple Bus SyncFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1 , 02 4 x3 6 x 2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: There are two errata notices at the end of this data sheet. The corrections have already been incorporated

nickel bh curve

Contextual Info: Permanent Magnets DDMagic シリーズ 重希土類元素拡散 Heavy Rare-Earth Elements Diffusion Technology DDMagic® 重希土類元素拡散技術による高性能化 Higher performance by heavy rare-earth elements diffusion technology Dy Diffusion Series - DDMagic®

sn75155

Abstract: P2951 fbii D2951 SN75188 SN75189A
Contextual Info: SN75155 LINE DRIVERAND RECEIVER SU-S017B - D2951, JULY 1986 - REVISED MARCH 1993 D OR P PACKAGE TOP VIEW Meets EIA-Standard RS-232-C 10-mA Current Limited Output Wide Range of Supply Voltage Vcc = 4 .5 V to 1 5 V t 1 U DA [ 2 8 ] V CC 7 ] DY RY [ 3 6 ] R TC

Contextual Info: REVISION DY DO NOT SCALE FROM THIS PRINT TFM-1XX-XX-XXX-X-XXX NOTES: 1. MINIMUM PUSHOUT FORCE TO BE 12 OZ RETENTION FOR CONTACTS AND WELD TABS. 2. COPLANARITY: .004[.10] = POS 02 THRU 26 C1 No OF POSITIONS .006[.15] = POS 27 THRU 50 3. NOTE DELETED. LEAD STYLE -01: -5 THRU -50 ALL

GM7IC4256A

Abstract: 71c4256a GM7IC4256A/AL-70 GoldStar 4256a GM7IC 71C4256 GoldStar battery itec C4256 101 gst
Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E D 4Q2Ô757 G0G3415 GST 7 GoldStar G M 7 1 C 4 2 5 6 A /A L 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A/AL is the new generation dy­ namic RAM organized 262,144x4 Bit. GM71C4256A/AL has realized higher density, higher per­

Contextual Info: |dy In teg rated Dev ice Technology, Inc. CMOS Triple Bus SyncFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1024x36x2 PRELIMINARY I D T y iii ll IDT723646 FEATURES: • Memory storage capacity: IDT723626-256 x 36 x 2 IDT723636-512 x 3 6 x 2 IDT723646-10 2 4 x 3 6 x 2

Contextual Info: |dy Integrated Dev ice Technology, Inc. CMOS Triple Bus SyncFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1024x36x2 PRELIMINARY I D T y iii ll IDT723646 FEATURES: • Memory storage capacity: IDT723626-256 x 36 x 2 IDT723636-512 x 3 6 x 2 IDT723646-10 2 4 x 3 6 x 2

Contextual Info: SYS9 4 0 0 –ECX D e ve lope r - Re a dy Re fe re n ce Pla t for m Applica t ion s • Handheld devices • Digital signage  Telem at ics  I nt eract ive client s  POS term inals  Mobile infotainm ent Pr oce ssin g & Pe r form a n ce  I nt el

Contextual Info: NEC JJPD424268 262,144 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations T h e ¡j PD 4 2 4 2 6 8 is a 262,144 by 4-b it dy n am ic RAM 2 0 -Pin Plastic DIP d e s ig n e d w ith a w rite -p e r-b it o p tio n to o p e ra te from a

707j

Abstract: XC002 D42S161
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T H M 8 5 1 5 2 4 .2 8 8 W O R D S X 8 B IT D Y N A M IC R A M M O D U L E STATIC C O L U M N M O D E 4 S / L “1 0 , 1 2 ' D Y N A M IC R A M M O D U LE DESCRIPTION The T H M 8 5 1 4 S /L is a 524,288 words by 8 bits dy­ namic RAM m odule which assembled 4 pcs o f TC514258J

rtm870t

Abstract: RTM870T-690 9LPR462 rtm870 SRN22J-4-GP ICS9LPR462 foxconn rs690mc Socket AM2 GPIO57
Contextual Info: 5 4 3 2 1 Yukon Block Diagram AMD 8,9 DDR2 SODIMM DIMM2 K8 Rev.G AM2 Socket DDR II 533/667/800 8,9 HyperTransport 16x16 32 4,5, 6,7 L1: Signal 1 L2: VCC L3: Inner Signal 2 L4: Inner Signal 3 L5: GND L6: Signal 4 Project code: 91.4BC01.001 PCB P/N : 48.4BC01.001

KDS - R303

Abstract: RTM875T-605 MARVELL G77 9lpr462aglf KDS crystal 20.000 FDN338P-NL-GP 88E8071 wistron R1045 ATI-RS690M
Contextual Info: 5 4 3 2 1 Pomona/Texcoco Block Diagram DDR2 SODIMM DIMM1 D AMD DDR II 533/667/800 9 DDR2 SODIMM DDR II 533/667/800 DIMM2 New card 29 Mini Card C RJ45 XFORM 23 23 29 LAN Marvell 88E8071 23 16x16 CLK GEN. 14.318MHz ISL6264 38/39 INPUT S-Vedio15 PCI-E x 1 ATI

AU-6433

Abstract: BCM5784MKMLG TPS5117 SN0608098 JM70-PU au6433 WPC773L TPS51125 MXM3 CONNECTOR wistron
Contextual Info: 5 4 3 2 1 JM70-PU AS 17" Block Diagram DDR2 667/800MHz 667/800 MHz 16,17 D DDR2 667/800MHz 667/800 MHz 16,17 PCB STACKUP AMD Giffin CPU S1G2 (35W) 39 3D3V_S5(7A) SYSTEM DC/DC 16X16 LCD LVDS, CRT I/F SYSTEM DC/DC ETHERNET PCIex1 G1442R 32 ACPI 1.1 CardReader

C4832

Abstract: 4U701 E328 APL5913-KAC-1-GP 62642 AM2 socket G909-330T1U-GP foxconn RTM875T-605 Socket AM2
Contextual Info: 5 4 3 2 1 Yukon Block Diagram AMD 8,9 DDR2 SODIMM DIMM2 K8 Rev.G AM2 Socket DDR II 533/667/800 8,9 HyperTransport 16x16 32 4,5, 6,7 L1: Signal 1 L2: VCC L3: Inner Signal 2 L4: Inner Signal 3 L5: GND L6: Signal 4 Project code: 91.4BC01.001 PCB P/N : 48.4BC01.0SA

g792

Abstract: ATI sb600 P2231NFC1 G7922 WISTRON CP2211F SC6D8P50V2DN-GP ATI-RS690M PDTC124 NP119
Contextual Info: 5 4 3 2 1 Orta Block Diagram AMD 8,9 DDR2 SODIMM DIMM2 8,9 Power Switch P2231NFC1 28 HyperTransport New card 28 RJ45 C 24 24 INPUT OUTPUT DCBATOUT CRT13 VCC_CORE_S0 SYSTEM DC/DC LCD14 INPUT OUTPUT DCBATOUT PCI-E x 1 1D2V_S0 1D8V_S3 SYSTEM DC/DC INPUT PCI-E x 4

RTM870T-691

Abstract: rtm870t RLT8100C WPC8763L realtek uwb KB33 ATI SB600 rtm870 ST330U2D5VDM-9GP EC565
Contextual Info: 5 4 3 2 1 CPU V_CORE Spears AMD UMA Block Diagram ICS9LPR464 4 DDRII Slot 1 9 533/667 AMD CPU K8 Rev. G S1g1 package DDR II 533/667 Channel B 5,6,7,8 HyperTransport 16X16 North Bridge Local Frame Buffer CPU I/F 14 39 INPUTS OUTPUTS DCBATOUT VCC_CORE SYSTEM DC/DC

RTM875T-605

Abstract: PCI7412 C3592 1D05V circuit diagram of usb webcam transformer EC28 foxconn SB3032 Socket AM2 bk51
Contextual Info: A B C D Columbia/Tangiz Block Diagram Project code: 91.4T301.001 PCB P/N : 48.4T301.01M REVISION : -1M Mobile CPU CLK GEN. 4 2.0G : 71.MEROM.A0U 2.33G : 71.MEROM.B0U 71.09502.00W DDR2 533/667MHz PCB STACKUP TV Out 4, 5 TOP 14 CRT Crestline AGTL+ CPU I/F 12,13