E 13009 Z Search Results

D 13009 K

Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
Contextual Info: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:

SR 13009

Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

j 13009

Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
Contextual Info: ± 0 N m ü re ID Is- ; / l \ t * *4 CUL a. O * id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT *7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =*c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J^ co * ¥ - æ ^

DO-213AA

Abstract: TA 8270 H D 13009 K j 13009 Siemens+MTT+95+A+12+N
Contextual Info: Zener Regulator Diodes ZEN Microsemi Package Division I Outline SM SM SM STD STD STD STD STD STD STD STD STD STD STD SM STD STD SM STD STD SM SM SM STD STD STD STD STD STD STD STD STD STD STD SM STD STD SM STD STD SM SM SM STD STD STD 11487 13008 13009 3819

176380-3

Contextual Info: 4 I •h I *£#£ : o / t\ * : OD n U N ft I ^ i* >■:T ; 7 y ? X A 0 66-^- -f o ^ CUL 9 4 V - 0 J 7. 15 ft, A*. «3 ^ ^ ^ A *an-i±_ti-r : ? v ; A W t . 3>*mJiA_h.0D — v >r 'U -!'' * > v * » C » * * « 0. 3pm3C.ii , 0. 76jjmUjt_h.<75 f t > y , W « 1fJMJ, _fc<r>^ 9 > v *

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

Contextual Info: D-Subminiature connectors •370 inch Solder pin angled with threaded insert, mounting bracket and grounding clip Socket connector Plug connector A 6 > 1!-O H D m s p m \£ - o w j w 0 6 c 7 <•*0 3 clip for PCB 0 3.1 ‘ 0; mm, t = 1.6 mm clip for PCB 0 3.1 - 01 mm, t = 1.6 mm

footprint 8M1-A

Contextual Info: Zero Insertion Force PGA Test and Burn-in Sockets cont. Grid Size No. of Pins Dim. “C” 12 x 12* 144 1.100 [27.94] 13 x 13 169 1.200 [30.48] 14 x 14* 196 1.300 [33.02] 15 x 15 225 1.400 [35.56] 16 x 16* 256 1.500 [38.10] 17 x 17 289 1.600 [40.64] 18 x 18*

transistor MJ 13009

Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
Contextual Info: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching

Contextual Info: ASSMANN Electronic C o m p o n e n ts Vertrieb Deutschland Vertretergebiete 1,2 und 7 Verkauf: Anke Wolter Tel. 02351/554-114 Kundendienst: Erika Kelleher Tel. 0 2351/5 54-110 Vertretergebiete 3, 4, 5 und 6 Verkauf: Ute Vasbender Tel. 02351/554-112 Kundendienst:

E 13009

Abstract: transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009
Contextual Info: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

transistor E 13009

Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
Contextual Info: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 | D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

27W2

Abstract: 007W2 003W3SXX99A10 3007W2SAM99A10X 13W6 017W2SAM99A10 007W2SAM99A10 21WA4PAR99C20X 17W5 21W1
Contextual Info: Com b i n at i o n D - S U B Connectors Section 6 Combination D-SUB Connectors Combination D-SUB Connectors provide the ideal solution for applications to require power, signal and coaxial connections within one connector. This series of connectors achieves space saving on PCB‘s and

MT4C16270DJ-7

Contextual Info: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical

DK 13001

Abstract: catalog 1308940 raychem catalog termination kit MIL-STD-1553B connector DK-621 Catalog 1308940 revised 5-03 Raychem cable 10612 raychem high voltage termination kit MIL-STD1553B MIL-STD 1553B cable connector
Contextual Info: Data Bus MIL-STD-1553B Components Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13002 Cables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13003, 13004

Est 13003

Abstract: Aries Electronics transistor E 13009 cup 10019 tsop 48 PIN SOCKET pin identification plcc thru hole socket 20 32 pin zif connector aries all transistor 13009 torlon transistor 13009
Contextual Info: 8 E DI N TH O EI G H T I INTERCONNECTION & PACKAGING SOLUTIONS SHORTFORM CATALOG For more than a quarter century, Aries has helped solve interconnection and packaging problems with an unusual range of standard, programmed, and custom products. Welcome to Aries!

transistor E 13009

Abstract: E 13009 L e 13009 f antilarsen dynamic 13009 TRANSISTOR equivalent ceramic resonator 455 khz transistor d 13009 log tx6 E 13009 AR 9335
Contextual Info: U3810BM Multi-Standard Feature Phone IC Description The U3810BM multi-standard feature phone circuit is designed to be used with a microcontroller using a 2-wire serial bus. It performs all speech and line interface functions required in an electronic telephone set: the

transistor E 13009

Abstract: 13009 TRANSISTOR equivalent transistor switch 13009 transistor d 13009 transistor 13009 80C51 LQFP100 PH2369 SAA5360 SAA5360HL
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA5360; SAA5361 Multi page intelligent teletext decoder Product specification Supersedes data of 2003 Aug 01 2004 Apr 13 Philips Semiconductors Product specification Multi page intelligent teletext decoder CONTENTS 1 FEATURES

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

bta1b

Abstract: ANI 1015 1N3064 1N916 binary multiplier
Contextual Info: f MI L - M- 3 8 5 1 0 / 3 1 8 A 9 August 1983 SUPERSEDI NG MI L - M- 3 8 5 1 0 / 3 1 8 USAF 20 A p r i l 1979 MI L I T ARY S P E C I F I C A T I O N MI C R OC I R C U I T S , D I G I T A L , LOW POWER SCHOTTKY T T L , BI NARY MU L T I P L I E R , MONOLI THI C S I L I C ON