E 1305 Search Results

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

V850ES

Abstract: V850ES instruction set
Contextual Info: User’s Manual 32 V850ES/JE3-E, V850ES/JF3-E, V850ES/JG3-E User’s Manual: Hardware RENESAS MCU V850ES/Jx3-E Microcontrollers V850ES/JE3-E V850ES/JF3-E V850ES/JG3-E PD70F3826 μPD70F3830 μPD70F3834 μPD70F3827 μPD70F3831 μPD70F3835 μPD70F3828 μPD70F3832

CIL 1302

Abstract: cil 1305
Contextual Info: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

microwave tubes

Abstract: aml 10 series
Contextual Info: 8727 Pencil Tube F a s t Warmup T im e Pre- T in n e d H e a te r P in s C e ra m ic M e ta l, H ig h -M u T rio d e Sturdy C o a x ia l- E le c t r o d e Structure GENERAL H e a te r, for U n ip o ten tial C athode: V oltag e AC or D C . . 6 .3 + 10%

TD62504AP

Abstract: TD62503AP TD62505AP TD62502AP td623 TD62003 TD62504a TD62507AP
Contextual Info: DE SCRIPTION 1. M a x i m u m Ratings The m a x i m u m ratings are the s p e c i f i c a t i o n s that must not be e x c e e d e d to guarantee the life and r e l i a b i l i t y of ICs. according to the materials, differ from one These valu e s are d e t e r m i n e d

TS2915A

Abstract: Thomson Semiconducteurs
Contextual Info: THOMSON SEMICONDUCTEURS TS2915A Q U A D T H R E E - S T A T E B U S T R A N S C E IV E R W IT H IN T E R F A C E L O G IC Q U AD THREE-STATE T h e T S 2 9 1 5 A is a hig h-p erfo rm ance, lo w -p ow e r S c h o ttk y bus tra n sc e ive r inte nd e d fo r b ip o la r o r M O S m icrop ro ce ssor system ap p lic atio n s . T h e d e vi­

Contextual Info: N ovem b e r 1 9 9 6 ^ÉL Micro Linear ML6310 3V/5V Read Channel Front-end Processor GEN ERAL D ESCRIPTION FEATURES T h e M L 6310 is a BiCM 0 S R e a d C h a n n e lF m n t-e n d P ro c e s s o r E w h ic h ds o n e h a l f o f th e d isk le a d c h a n n e l

Contextual Info: 10 NO TES: 1. HOUSING M A T E R IA L : LC P , G L A S S F IL L E D , U L 9 4 V - 0 COLOUR B L A C K . - .0 4 4 1 .0 0 3 (1.12 ± 0.08 .0 7 9 2 . 00 ) 2. T E R M IN A L M A T E R IA L : P H O S P H O R BR O N ZE 3 . S E E A P P R O P R IA T E S H E E T FO R CIRCUIT S IZE ,

153j capacitor

Abstract: Aerovox energy discharge Aero m capacitor aerovox capacitor oval Type p BS AEROVOX Aerovox energy discharge capacitor
Contextual Info: Pulse Capacitors for Flash Lamp Applications Technology for the New Millennium Aerovox's Type Z and Type Y m e ta llize d e le ctro d e e n e rg y discharge pulse capacitors provide a highly reliable cost-effective source of energy storage for a variety of

Contextual Info: büE » AEBSbOS DDMb5S^ öb? « S I E G ^ -4 ^ 1 SIEMENS SFH 4415/11 LASERDIODE FC RECEPTACLE SIEMENS AKTIENGESELLSCHAF • E m issio n W avelength: 1300 nm O utput p ow er ratin gs refer to th e optim a lly c o u p le d output p ow er into a 10/125 n m S M fiber. T h e ope ra tin g tem p e ra tu re of th e la s e r h e a tsin k is

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

Contextual Info: MOTOROLA O rder this docum ent by M TP1306/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET MTP1306 N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES 30 VOLTS RDS on = 0.0065 OHM T h is a d v a n c e d h ig h -c e ll d e n s ity H D T M O S p o w e r FE T is

fairchild ECL

Abstract: F10115 F10116 F10515 F10516
Contextual Info: F10115 • F10116 • F10515 • F10516 LINE RECEIVERS D E S C R IP T IO N — T h e F 1 0 1 1 5 a n d F 1 0 1 1 6 a re d iffe r e n tia l a m p lifie rs w ith lo w im ­ p e d a n c e e m itte r-fo llo w e r o u tp u ts . A n in te rn a l re fe re n c e s u p p ly V b b is a v a ila b le for

SICK D-79183

Abstract: D-79183 D-79183 waldkirch SICK D-79183 waldkirch 79183 waldkirch 50-10P142 d 79183 AG D-79183 Sensick Sensors OD SICK AG D-79183
Contextual Info: H E E T S A T A D D i s p l a c e m e n t S e n s o r O D Displacement Sensors from the OD Series Displacement Sensor Scanner and measuring system at the same time T ▼ urement is the physical basis of the dis- The displacement sensors of the OD series are scanners and measuring systems at the same time.

Each TMS 9995 system

Abstract: comparison between intel 8086 and Zilog 80 microprocessor TIM99610 Z8000 MICRO SWITCH FREEPORT. ILL. U.S.A str 5667 tms 99000 kam ling tms 99110
Contextual Info: TEXAS INSTR -CUC/UPÏ 45 D Ëj ûTbl72E • ■ T-4Q. | M 6 ; □P E W ? 7 T M S 99000 S Y S T E M B R IE F A T H IR D G E N E R A T IO N O F M IC R O P R O C E SSO R C O M PO N EN TS, SO FTW A R E, A N D SU PPO RT The new T M S 99000 microprocessor family has harnes­

Contextual Info: DRAWING No.: Customer Information Sheet T TT SHEET M80-4CI02FI - 1 1-305 2 OF SPECIFICATIONS: MATERIAL: MOULDING : G L A S S - F I L L E D PPS, U L 9 4 V - 0 , BLACK JACKSCREW & C I R C L I P : S T A I N L E S S S T E E L SIGNAL CONTACT: C L I P = B E R Y L L IU M COPPER

2N5232

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIG N AL TRANSISTORS G E N E R A L PURPOSE AM PLI FIER S TO-98 PA C K A G E Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256

M22-2581706

Contextual Info: •iOllbHB D O O O I I H b4 T 2mm M22 Connectors V e r t i c a l Pin H e a d e r s PITCH A ra n g e o f single a n d d o u b le ro w ve rtica l pin headers w h ich can be used w ith ju m p e r sockets show n on p a g e F6 a n d pc b o a rd sockets show n on pages F2 to F5. C hoice o f p la tin g finish.

Contextual Info: Alle Rechte vorbehalfen/ /III rights reseriei 5 4 2 3 1 G e s a mt l a n q e im v e r s c h r a u b t e n Z u s t a n d ca. 46,75mm complete length when assembled app. i6,75mm D X • [If lil & 1 C nr lii SW14 / width across flats U SW13/ width across flats 13

Contextual Info: Package outline SOT1350-1 UFLGA49: plastic ultra thin fine-pitch land grid array package; 49 lands A B D ball A1 index area A E detail X e1 C e Øv Øw b C A B C y1 C y G F e E e2 D C B A 1 ball A1 index area 2 3 4 5 6 7 X 5 mm scale Dimensions mm are the original dimensions

max8786

Abstract: 2702 optocoupler
Contextual Info: Data Sheet January 2000 HW075G-E, HW075F-E, HW075A-E Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input, 2.5 Vdc to 5 Vdc Output; 37.5 W to 75 W Features The HW075 Series Power Modules use advanced surfacemount technology and deliver high-quality, efficient, and

Contextual Info: Package outline WLCSP39: wafer level chip-scale package; 39 balls; 2.66 x 3.765 x 0.38 mm B E NXH1501UK A ball A1 index area A A2 D A1 detail X e1 e3 e C C A B C Øv Øw b y e K J H G F E D C B A ball A1 index area e2 1 2 3 4 e4 X 3 mm scale Dimensions mm are the original dimensions

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123FE6PM Microcontroller identical to LM4F231E5QR D ATA SH E E T D S -T M 4C 123F E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 371A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright