E1115 Search Results

Contextual Info: F-209 SMH–110–02–S–D SMH–120–02–G–S SMH–112–02–S–S .025"SQ SMT SOCKET SMH SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SMH Insulator Material: Black LCP Contact Material: FILE NO. E111594

Contextual Info: R O L C -1 2 5 - 0 2 - S - Q -L C F -2 0 4 R O L C -1 2 0 -0 2 -S - Q - P am ti R O L C -1 2 0 -0 2 -S -Q S P E C IF IC A T IO N S For complete specifications see www.samtec.com?ROLC Insulator Material: Black Liquid Crystal Polymer oleho . E111594 C ontact Material: BeCu

Contextual Info: F-209 SSW–116–22–G–D–VS SSW–130–22–S–S–VS .025"SQ SMT SOCKET SSW SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SSW Insulator Material: Black LCP Contact Material: FILE NO. E111594 Phosphor Bronze

Contextual Info: F-209 MMS–110–01–L–DH MMS–112–02–T–SH MMS–108–01–T–SV MMS–116–02–L–DV 2mm BOX SOCKET MMS SERIES SPECIFICATIONS For complete specifications see www.samtec.com?MMS Insulator Material: Black LCP Contact Material: FILE NO. E111594

Contextual Info: F-209 ZML–113–02–G–D ZML–110–03–S–D ZML–125–04–G–D 1,27mm .050" STACKER SPECIFICATIONS Mates with: SMS, RSM For complete specifications see www.samtec.com?ZML Insulator Material: Black LCP Terminal Material: FILE NO. E111594 Phosphor Bronze

Contextual Info: F-209 RSM–110–02–S–D–K RSM–120–02–L–S RSM–130–02–S–D 1,27mm .050" SOCKET RSM SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?RSM Insulator Material: Black Liquid FILE NO. E111594

Contextual Info: F-209 HLE–116–02–G–DV HLE–110–02–G–DV–A HLE–130–02–G–DV .025"SQ SOCKET HLE SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?HLE Insulator Material: Black Liquid FILE NO. E111594 Crystal Polymer

Contextual Info: ONE-PIECE LOW PROFILE SEL SERIES S P E C IF IC A T IO N S Large deflection For complete specifications see www.samtec.com?SEL Insulator Material: Liquid Crystal T O Polymer file no. E111594 Contact Material: Phosphor Bronze Current Rating: 1A @ 80°C Mating Force:

Contextual Info: F-209 SUPPLEMENT MPAS–068–ZSGT–11 MPAS–144–ZSGT–13 MVAS, PIN GRID ARRAY SOCKETS MPAS, MSAS SERIES Mates with: MPAT, MVAT, MHAT, MSAT SPECIFICATIONS MPAS, MVAS Insulator Material: Black G.F. Polyester Contact: BeCu FILE NO. E111594 Shell: Brass except Style K

Contextual Info: SSW–125–01–G–P F-209 SSQ–115–04–S–T SOCKET STRIP SSW & SSQ SERIES SPECIFICATIONS For complete specifications see www.samtec.com?SSW or www.samtec.com?SSQ Insulator Material: Black Liquid Crystal Polymer FILE NO. E111594 -S & -D or Black High Temperature

704C

Abstract: E1114
Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER REV. SSN —LX01 1 704C B E.C.N. NUMBER AND REVISION COMMENTS DATE A E.C.N. # E1115 6 B /0 5 /0 4 - B E.C.N. # E1114S 1 1 .1 6 .0 6 NOTES: 1. MATERIAL; CLEAR POLYCARBONATE. 2, FR ES N EL SURFACE, A~A *£,35 [ 00 , 093 ] El

Contextual Info: F -2 0 4 amtec L S 2 -1 3 0 -0 1 -L -D L S 2 -1 2 0 -0 1 -L -D -R A 1 2mm TERMIN AL/SOCKET LS2 SERIES S P E C IF IC A T IO N S M a te s w ith LS2 For complete specifications see www.samtec.com?LS2 In s u la to r M a te ria l: T O Liquid Crystal Polymer h u h o . E111594

Contextual Info: EDE5132AABG Package Drawing 128-ball FBGA Unit: mm 10.5 ± 0.1 0.2 S A 13.5 ± 0.1 INDEX MARK 0.2 S B 0.2 S 1.2 max. S 0.1 0.35 ± 0.05 S 128-B0.45 ± 0.05 B0.15 M S A B 0.4 B 12.0 0.8 A INDEX MARK 2.0 0.8 8.8 ECA-TS2-0255-01 Preliminary Data Sheet E1115E40 Ver. 4.0

704C

Abstract: E1115 b0504
Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S S N — LX01 1 7 0 4 C A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # DATE E1115 6 B /0 5 /0 4 NOTES: 1. MATERIAL; CLEAR POLYCARBONATE. 2, FRESNEL SURFACE, A~A *£ ,3 5 [ 0 0 , 0 9 3 ] El 'UNLESS OTHERWISE SPECIFED TOLERANCES PER DECIMAL fflECISIQN ARE; X = ± 1 <±0.039 , X J < = ± 0 5 (±0,020), m = ± 0 , 2 5 (M .910), X,XXX=±D,127 {±0,005).

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

0x000001D8

Abstract: sparclite fujitsu dot matrix printer circuit diagram monitor e74 0x00000128 MB86930 IS 208 MXM pin assignment E5214 e328
Contextual Info: SPARClite 930 Series Embedded Processor User’s Manual MB86936 Addendum JULY 1996, Edition 1.3 FUJITSUMICROELECTRONICS, INC. SPARClite User’s Manual – MB86936 Addendum Overview of the MB86936 1 Caches 2 Bus Interface Unit 3 DRAM Controller 4 DMA Controller

MB85RC256VPF-G-JNERE2

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-6v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85RC256

Abstract: RC256V FPT-8P-M08 E21200 2006FUJITSU
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: U S B -B -S -S -B -S M USB-B, USBR-B SERIES STANDARD & RUGGED USB 2 SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com? USB-B or www.samtec.com?USBR-B Minimum 15N withdrawal force Insulator Material: High Temperature

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-5v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the