E1A481 Search Results

Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance

Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance

Contextual Info: PD - 9.1356D International IG R Rectifier IRF7416 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching Voss = -30V Ftas on = 0 .0 2 Q

Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability

marking 43b

Abstract: E1A-481
Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability

zener 3.082

Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
Contextual Info: 1SMB3EZ6.8~1SMB3EZ100 SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability

RIO 1R0

Abstract: r001 smd
Contextual Info: i c1 - 1 M EC C G S H IG H VO LTA G E R E S IS T O R S H IG H VALUE R E S IS T O R S H IG H P O W E R R E S IS T O R S A LU M IN IU M C L A D R E S IS T O R S C U R R E N T S E N S E R E S IS T O R S SMD Precision Current Sense Resistor TY PE S S E R IE S

E1A-481

Contextual Info: Temperature profile of reflow soldering Foot Pattern Embossed Carrier Tape Dimensions Package USAGE ’’i DIRECTION Top Cou«r Tape , —I END START *1•■■■■■■■■ L JL J L I_ ' 1 /- À - T '''Embossed Cartier Tape 78 Reel No Corrporient

E1A-481

Contextual Info: % f 1 a, t V RT05, RT03, THIN FILM CHIP RESISTORS 1 m % s * \ i v * J i m * FEATURES • High stability «LowTCR • H'9h accuracy ±0.1%,±0.5% M ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70'C Temperature coefficient Delated to 0 load at

theory

Abstract: transistor d355 2N3904 a03 clf circuit diagram with voltage CLS62-222 D355 transistor 1DDD355BB-M02 D3552 design ideas 2N3904
Contextual Info: Data Sheet D355B Electroluminescent Lamp Driver IC General Description 5 D3 The Durel D355B is part of a family of highly integrated EL drivers based on Durel’s patented three-port 3P topology, which offers built-in EMI shielding. This high efficiency device is well suited

E1A-481

Contextual Info: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O

Thermal Resistance to ambient SMB Case

Abstract: zener diode 47-10 1SMB2EZ10 1SMB2EZ100 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 diode SMB case
Contextual Info: 1SMB2EZ6.8~1SMB2EZ100 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 2.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability

1SMB2EZ13

Abstract: 1SMB2EZ51 1SMB2EZ10 1SMB2EZ11 1SMB2EZ12 E1A-481
Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

e1a481

Abstract: E1A-481
Contextual Info: _% «5*^% * 1 i t a rr -M m ^4 * ^ » £ * % ¿s. e ^@6- 4^ ga»g # FEATURES . • High stability ^ pB| W • RT05, RT03, THIN FILM CHIP RESISTORS 4 % .H ig h accuracy ±0.1%,±0.5% ^ ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70 °C

Contextual Info: PD - 9.1238C International IOR Rectifier IRF7301 HEXFEf Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V d s s = 20V

Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

1SMB3EZ10

Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481
Contextual Info: 1SMB3EZ6.8~1SMB3EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance

zener 4.7v

Abstract: E1A-481
Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability

Low ESR SMD

Abstract: ancol 6BT SMD EIA535BAAC capacitor 2200 uF, 50volt
Contextual Info: Ancol Solid Electrolyte Tantalum Chip Capacitor AN018B- CA45LR Series Low ESR SMD Brief Introduction: Features: The CA45LR Series is low ESR tantalum chip capacitor, •Operating temperature Range:-55℃ +125 C; >85℃ with rated voltge suitable for SMT electric board used for

8v2b

Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability

RIO 1R0

Abstract: CGS 1R0 E1A-481-A
Contextual Info: MEC CGS HIGH VOLTAGE R E S IS T O R S HIGH VALUE R E S IS T O R S HIGH P O W E R R E S IS T O R S ALUMINIUM C L A D R E S IS T O R S C U R R E N T S E N S E R E S IS T O R S SMD Precision Current Sense Resistor T Y P E S S E R IE S M E C C G S introduces two surface mount power resistors to meet

RC-06

Abstract: RC05 E1A-481
Contextual Info: RC02, RC03, RC05, RC06, « RC12, RC20, RC25 ' THICK FILM CHIP RESISTORS FEATURES • Extremely thin and light • Highly reliable multilayer electrode construction • Compatible with both flow soldering and reflow soldering • Highly stable in auto-placement surface mounting

BDS-4020S

Abstract: D365A m02 marking gain BDS4020S 1ddd365aa design ideas EL lamp BAS21LT1 BDS-4020 MMBT5551LT1
Contextual Info: Data Sheet D365A Electroluminescent Lamp Driver IC General Description The Durel D365 is part of a family of highly integrated EL drivers based on Durel’s patented three-port 3P topology which offers built-in EMI shielding. The D365 IC and three components make a