E2 W SMD TRANSISTOR Search Results

BUD620

Abstract: E2 p SMD Transistor ic 9114 FE2A INTERNATIONAL RECTIFIER 9125 smd transistor 015 G 2a1100
Contextual Info: BUD620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage

E2 SMD Transistor

Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
Contextual Info: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.

AN1294

Abstract: PD60015 PD60015S
Contextual Info: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

pd55035

Abstract: smd transistor code A4
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd transistor code A4

Abstract: AN1294 PD60004 PD60004S
Contextual Info: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

AN1294

Abstract: PD60030 PD60030S
Contextual Info: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

AN1294

Abstract: LET20015 LET90015
Contextual Info: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

AN1294

Abstract: LET20015 LET90015
Contextual Info: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

Contextual Info: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

transistor kA2 smd

Abstract: AEP01481
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms

Contextual Info: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO

Contextual Info: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30

Contextual Info: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

BUD620

Abstract: E2 p SMD Transistor
Contextual Info: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

E3180

Abstract: TO220-7 package AEP01481 AEP01724 P-TO220-7-230 TLE4267GM
Contextual Info: 5-V Low-Drop Voltage Regulator TLE 4267 Bipolar IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % 400 mA output current capability Low-drop voltage Very low standby current consumption Input voltage up to 40 V

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd dual transistor G 9

Abstract: E2 SMD Transistor E3180 P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 TLE4267GM marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE 712
Contextual Info: 5-V Low Drop Voltage Regulator TLE 4267 Features • • • • • • • • • • • • • • • Output voltage tolerance ≤ ±2% 400 mA output current capability Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms

smd code marking v8 sot23

Abstract: SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13
Contextual Info: BROADBAND SMD TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave

E3180

Abstract: smd code book e6 diode smd E6 E2 SMD Transistor P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 P-DSO-14-8 smd code book transistor
Contextual Info: 5-V Low-Drop Voltage Regulator TLE 4267 Bipolar IC Features














Output voltage tolerance £ ± 2 % 400 mA output current capability Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V £ 400 ms

P1M marking code sot 223

Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Contextual Info: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions

smd transistor marking A4

Abstract: PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking
Contextual Info: LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package

Contextual Info: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable