E32684A Search Results

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET E32684A NOT RECOM MENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET E32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im