ECG 2322 Search Results

ecg manual ic

Abstract: thermistor 10k ohm mcp9700-e MCP6SX2 USB PIC18F2550 assembly .asm MCP9700E NTC sensor MCP6S91 equivalent AN897 MCP9700
Contextual Info: MCP9700 Thermistor Demo Board User’s Guide 2008 Microchip Technology Inc. DS51753A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: MCP6SX2 PGA Thermistor PICtail Demo Board User’s Guide 2006 Microchip Technology Inc. DS51517B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

ZENER 5V1

Abstract: kaschke 78T capacitor 100nf 400v CAPACITOR 100nf scr 2N5064 equivalent Transformer kaschke 230vac to primary 12vac transformer TRANSISTOR BC 338 SMD 094094912000 SCHEMATIC WITH IR2161
Contextual Info: Application Note AN-1069 Electronic Transformer Applications By Peter Green Table of Contents Page Protection Issues for IR2161 Halogen Circuits.1 Open Circuit

Contextual Info: INA 322 INA322 INA2322 SBOS174B – DECEMBER 2000 – REVISED FEBRUARY 2006 microPower, Single-Supply, CMOS INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW COST ● LOW QUIESCENT CURRENT: 40µA/channel Shut Down: < 1µA ● HIGH GAIN ACCURACY: G = 5, 0.07%, 2ppm/°C

INA322EA

Contextual Info: INA 322 INA322 INA2322 SBOS174B – DECEMBER 2000 – REVISED FEBRUARY 2006 microPower, Single-Supply, CMOS INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW COST ● LOW QUIESCENT CURRENT: 40µA/channel Shut Down: < 1µA ● HIGH GAIN ACCURACY: G = 5, 0.07%, 2ppm/°C

Hitachi DSA00276

Contextual Info: HVM16 Variable Capacitance Diode for FM tuner ADE-208-086E Z Rev.5 Jul. 2000 Features • Worked by 8V, suitable for small manufacture sources of electric power. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

Hitachi DSA00280

Contextual Info: 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 Z 1st. Edition Mar. 2001 Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage

1ss270a

Abstract: Hitachi DSA00340 Hitachi DSA003
Contextual Info: 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-166B Z Rev.2 Oct. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.

HSU227

Abstract: Hitachi DSA0045
Contextual Info: HSU227 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-779A Z Rev.1 Aug. 2000 Features • Low capacitance. (C = 3.0 pF max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information

2SD1489

Abstract: 2SD787 DSA003638
Contextual Info: 2SD1489 Silicon NPN Epitaxial ADE-208-1156A Z 2nd. Edition Mar. 2001 Application • Low frequency power amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

HITACHI DIODE

Abstract: HSU276 DSA003636
Contextual Info: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F Z Rev. 6 Jul. 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information

HSU88

Abstract: DSA003636
Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev. 7 Dec. 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

2SK359

Abstract: 2SK439 DSA003638
Contextual Info: 2SK439 Silicon N-Channel MOS FET ADE-208-1172 Z 1st. Edition Mar. 2001 Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage

HSU276A

Abstract: HITACHI DIODE DSA003644
Contextual Info: HSU276A Silicon Schottky Barrier Diode for Mixer ADE-208-837 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information

HSB0104YP

Abstract: Hitachi DSA0045 43E4
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730A Z Rev.1 Sep. 2000 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a

2SA1374

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA1374 Silicon PNP Epitaxial ADE-208-1016 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

1990 1142

Abstract: Hitachi DSA0076 2SD1101 2SB831 2SD467
Contextual Info: 2SD1101 Silicon NPN Epitaxial ADE-208-1142 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Hitachi DSA0076

Abstract: 2SC1345 2SC2463
Contextual Info: 2SC2463 Silicon NPN Epitaxial ADE-208-1064 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2463 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

Hitachi DSA0076

Abstract: 2SA1390 2SA673
Contextual Info: 2SA1390 Silicon PNP Epitaxial ADE-208-1017 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

2SA1122

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA1122 Silicon PNP Epitaxial ADE-208-1009 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

Hitachi DSA002783

Contextual Info: HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-413A Z Rev.1 Oct. 2000 Features • Low forward resistance. (rf = 0.7Ω max) • Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No.

Hitachi DSA00276

Contextual Info: HVD385B Variable Capacitance Diode for VCO ADE-208-1407 Z Rev. 0 Apr. 2001 Features • High capacitance ratio. (n = 2.43 min) • Low series resistance. (rs = 0.75 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information

Hitachi DSA002715

Contextual Info: HVD369B Variable Capacitance Diode for VCO ADE-208-850 Z Rev.0 Jun. 2000 Features • • • • Low capacitance and to be usable at GHz. High capacitance ratio. (n = 2.3 min) Low series resistance. (rs = 0.5 Ω max) Super small Flat Package (SFP) is suitable for surface mount design.

Hitachi DSA002726

Contextual Info: HVD372B Variable Capacitance Diode for VCO ADE-208-957 Z Rev.0 Jul. 2000 Features • High capacitance ratio. (n = 2.00 min) • Good linearity of C-V curve. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No.