2SA836 Search Results

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2SA836

Abstract: Hitachi DSA002754
Contextual Info: 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline 2SA836 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage

transistor 2SA836

Abstract: 2SA836 Hitachi DSA00396
Contextual Info: 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage

2SA836

Contextual Info: 2SA836 Silicon PNP Epitaxial HITACHI Application Low frequency low noise amplifier Outline TO-92 1 I 1. Emitter 2. Collector 3. Base 3 2 1 97 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VcBO -5 5 V Collector to emitter voltage

2SA836

Abstract: 2SA836CTZ 2SA836DTZ PRSS0003DA-A SC-43A
Contextual Info: 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 Previous ADE-208-316 Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

Contextual Info: 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 Previous ADE-208-316 Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

2SA836

Abstract: Hitachi DSA0076
Contextual Info: 2SA836 Silicon PNP Epitaxial ADE-208-316 Z 1st. Edition Mar. 2001 Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

s2v 92

Contextual Info: H ITACHI 2SA836 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 4.2 Max ¡>2 Max 0 5 Max t . b n ii ic r 2. CoJJector X Ba*c il» mu» {JE0EC TO-92) • ABSOLUTE MAXIMUM RATINGS Ta=23»C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SAS36 Symbol Unit

2SA836

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM: -0.1 Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range

2SA836

Abstract: transistor 2SA836 VCE-12
Contextual Info: 2SA836 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.1 A Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

2SA934

Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA836 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z High DC Current Gain z Low Frequency Amplifier 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA836 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V Operating and storage junction temperature range

2SA836

Contextual Info: HITACHI 2SA836 SILIC O N P N P EPITA XIAL LO W F R E Q U E N C Y LO W N O ISE A M P LIF IE R 1. l-im uer 2. Cullccior 3. Base Dimensions in mm (JE D E C TO-92) I A B S O L U T E MAXIMUM R A T IN G S (Ta=25°C) Item Symbol MAXIMUM C O L L E C T O R D ISSIPA T IO N

2SA1122

Abstract: 2SA836
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SA836

Abstract: 2SA844
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SA836

Abstract: 2SA83
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor 2SA836

Abstract: 2SA836 2SA844 DSA003778 Hitachi 2SA
Contextual Info: 2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SA1374

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA1374 Silicon PNP Epitaxial ADE-208-1016 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO