ED 66 DIODE Search Results

MCT4R

Abstract: c950 mil-std-883* lead fatigue centrifuge phototransistor four-lead 88D marking
Contextual Info: GENL INSTR-. D T - < / /- £ 3 R eli a b il it y ^ c o n d itio n ed *. ERMETIC PHOTOTRANSISTOR & | ^ ^ g c ^ p pj 0C0UPLER :| ENERALas I Ifg lM M S IIB •fisa ; -,“ D E | 36=10126 □□03D0S 7 66 OPTOE L EK * -r j MCT4R DESCRIPTION PACKAGE DIMENSIONS

U309

Abstract: marconi company marconi U3090
Contextual Info: i m U309 APRIL, BOOSTER DIODE 0*3A IN D IR E C T L Y H EA T ED 19S2 BASE C O N N E C T IO N S A N D V A LV E D IM EN SIO N S Base : B9A Bulb : Tubular Overall length : 72—78 Seated length : 66—72 Max. diameter : 22 mm. mm. mm. View from underside of base.

ED 66 diode

Contextual Info: SKKD 40F, SKMD 40F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module SEMIPACK 1 12 122 1 :66 &66 ;66 1 :66 &66 ;66 .32 4 556 - 78 +      

Direct Digital Synthesis

Abstract: Sample Rate Converters
Contextual Info: Detailed Shortform Amplifiers Page 75 76 Page 74 Differential Line Drivers & Receivers, Preamps, Microphone Preamps See analog & digital audio Page 50 High Speed: Buffers Page 50 High Speed: Clamp Amps Page 50 High Speed: Photo Diode Pre-Amp Page 47 Page

1N4775

Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4784A
Contextual Info: • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4775 thru 1N4784A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

C200

Abstract: BZV58
Contextual Info: BZV58 C10.BZV58 C200 5W 3 ; + 9   :   Absolute Maximum Ratings Symbol Conditions Axial lead diode  :    9 3= ; +  + 2 &% >   '  8  :    9  ? 1   2 @=        A   4  + BC2 @3

D9K DIODE

Abstract: diode JD e6e1 DIODE K9 JD ELECTRONICS k9 diode DIODE 19 9
Contextual Info: BZV58 C10.BZV58 C200 5W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 3 ; + 9   :   Absolute Maximum Ratings Symbol Conditions Axial lead diode  :    9 3= ; + 

Contextual Info: BZV58 C10.BZV58 C200 5W 3 ; + 9   :   Absolute Maximum Ratings Symbol Conditions Axial lead diode  :    9 3= ; +  + 2 &% >   '  8  :    9  ? 1   2 @=        A   4  + BC2 @3

Contextual Info: International g K]Rectifier HEXFRED PD-2.375 Provisional Data Sheet HFA45HC120C ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units 1200 V lF AV 28 A trr (per leg) 135 ns

DIODE ED 11

Contextual Info: Obsolete Product - not recommended for new design MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION 100µm aperture Semi-insulating substrate High Responsivity Low Dark Current High Bandwidth

68W SOT

Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Contextual Info: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua

10z6.2t5

Abstract: 29712C 10Z3.6T5 29707H 10Z4.3T5 5ZS11B 5ZS12B 5ZS13B 5ZS14B 5ZS15B
Contextual Info: International Rectifier Semiconductors Zener Diodes REFERENCE TA B LE 5 W a tt* at 75*C lead tem perature -5 % tolerance c o ntinu ed Z zt at Type Stock No. Min. v 2a t I zt Nom. Max. IzT mA 5ZS11B 5ZS12B 5ZS13B 5ZS14B 5ZS15B 29689B 29690E 29691C 29692A

J476

Abstract: 2EZ100D
Contextual Info: Zener Regulator Diodes S M A J4761C SM A J4761D 2EZ82D 5 S M A J4762 SM A J4762A S M A J4762C SM A J4762D 2EZ91D 5 S M A J4763 SM A J4763A S M A J4763C S M A J4763D 2EZ100D 5 S M A J4764 S M A J4764A S M A J4764C SM A J4764D 2EZ110D 5 2EZ120D 5 2EZ130D 5 2EZ140D 5

Relay cf 318 9.0

Abstract: Relay cf 318 ez 741 DM 311 BG 215CN DM 311 BG 35 AB 314a 741 CN 211-DA msta
Contextual Info: ASEA Catalogue RK 74-10 E E d itio n 1 February 1£¡73 F ija R, P art 1 Component block type RTXE [c|ô|mTbI with diodes, thermistors or resistors • * * * * Requires no extra space To be mounted at the rear o f the relay terminal base The encapsulated block hermetically

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

Contextual Info: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere

8533 zener

Abstract: v regulator 7509 Zener 3139
Contextual Info: Zener Regulator Diodes Part Number ZEN UZ5880 1N5124 UZ4782 1N5375A 1N5375B SMBG5375B SMBJ5375B 1N4980 1N4980US JAN1N4980 JAN1N4980US JANS1N4980 JANS1N4980US JANTX1N4980 JANTX1N4980US JANTXV1N4980 JANTXV1N4980US 1N5376A 1N5376B SMBGS376B SMBJ5376B UZ5790 UZ5890

LTC4098-3.6

Abstract: SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals

zener diodes 1N serie

Abstract: 1N4784
Contextual Info: ^ SCS-THOMSON [» « iO T Q K S 1N 4 7 7 5 , 1 N 4784,A TEMPERATURE COMPENSATED ZENER DIODES NEW SERIE • SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING y :' x DO 35 Glass A B S O L U T E R A T I N G S (lim iting values) P tot

br - b2d

Abstract: br b2d
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

zenner

Abstract: CDLL4775 CDLL4775A CDLL4776 CDLL4776A CDLL4777 CDLL4777A CDLL4778 CDLL4778A CDLL4779
Contextual Info: • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL4775 thru • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% CDLL4784A • LOW CURRENT RANGE: 0.5 TO 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS

Contextual Info: • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL4775 thru • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE +5% CDLL4784A • LOW CURRENT RANGE: 0.5 TO 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS

zener diode JEDEC 1N

Abstract: 1N 4784A
Contextual Info: 1N4775 thru 1N4784A Mierèsemi Corp. ? 7fie tfwtfe experts SANTA ANA, CA SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 941-6300 FEATU R ES 8.5 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZEN EH VOLTAGE 6.5V + 5% [See Note 4) • TEM PER A TU R E CO EFFICIEN T RANGE: 0.01 % / °C TO 0 .0 0 0 5 % /°C

Contextual Info: 1N4775 thru Micmemi Corp. f SANTA A N A , CA Ttwóioóe experts 1N4784A SC O T T SD A L E , A Z For more information call: / 602 M i-6 3 0 0 FEATURES • ZENER VOLTAGE 8.5V ± 5% (See Note 4) 8.5 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • TEMPERATURE COEFFICIENT RANGE: 0.0l% /°C TO 0.0005%/°C