ZENNER Search Results

LTTG

Abstract: EM 257
Contextual Info: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

2SK318

Contextual Info: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES 2-Phase Half-Wave Pre Driver for Fan Motor TYPE ＢＤ６７１２ＡＦ FEATURES Built - in zenner diode for Vcc clamp 〇ABSOLUTE MAXIMUM RATINGS Symbol Limit Unit Pd 780＊ mW Operating temperature

2SK318

Abstract: "beryllium oxide" 20DRAM
Contextual Info: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2SK317

Abstract: HF VHF power amplifier 2sk317 hitachi k317
Contextual Info: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

FA 23 zenner

Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Contextual Info: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode

2SK317

Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Contextual Info: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •

K2259

Abstract: 2SK2259-01M 2SK2259-01MR T151 FA 23 zenner A2466
Contextual Info: 2SK2259-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • h igh forward Transconductance • Avalanche-proof • Including G-S Zenner diode

2SK317

Abstract: zenner 10v 2sk317 hitachi
Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

H150

Contextual Info: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode

1823-01R

Abstract: 2SK1823-01R T151 FA-MT A2260
Contextual Info: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode

sj 2258

Contextual Info: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • A ve lanche-proof • Including G-S Zenner diode

bd395

Contextual Info: Power Management IC Series for Automotive Body Control Regulator with Voltage Detector IC No.09039EAT05 BD3951F ●Description BD3951F is a 5V LDO system regulator particularly developed for automotive applications. The output current of the regulator can be drawn up to 150mA, and it has built-in power-on reset and input voltage sense. This device can withstand

Transistor A1H

Abstract: BD6709FS A1H Transistor BD6718 bd6709 BD6722 BD6718FV BD6721FS BD6722FS SSOP-A16
Contextual Info: TECHNICAL NOTE DC Brushless Motor Drivers for Cooling Fans Speed Controllable Single-phase Full-wave DC Brushless Fan Motor Drivers BD6709FS, BD6718FV, BD6721FS, BD6722FS ●Description This is the summary of models that suit for 12V speed controllable fan for desktop PC and general consumer equipment.

is2076a

Abstract: HA16150P HA16150T TSSOP-16 G9BP High-Speed Current Mode Push-Pull PWM Control IC
Contextual Info: HA16150T/P High-Speed Current Mode Push-Pull PWM Control IC REJ03F0146-0200 Previous: ADE-204-071A Rev.2.00 Jun 15, 2005 Description The HA16150 is a high-speed current mode PWM control IC with push-pull dual outputs, suitable for high-reliability, high-efficiency, high-mounting-density isolated DC-DC converter and high-output AC-DC converter control.

Contextual Info: 2SK1822-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features I Outline Drawings • High current • Low on-resistance b 5*02 • No secondary breakdown 2 7±0 2 • Low driving power • High forward Transconductance

Contextual Info: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62081AP/AF TD62082AP/AF TD62083AP/AF TD62084AP/AF 8-channel Darlington Sink Driver The TD62081 AP/AF Series features high-voltage, high current Darlington drivers composed of eight NPN

TD62001

Abstract: IC TD62002P AP series TD62003F TD62001AF TD62001AP 35VTA TD62004 TD62003P TD62001F
Contextual Info: TD62001~004P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62001P,TD62001AP,TD62001F,TD62001AF,TD62002P TD62003AF,TD62004P,TD62004AP,TD62004F,TD62004AF 7CH DARLINGTON SINK DRIVER

ZMM55C

Abstract: ZMM55-C10 ZMM55C-5V1 ZMM55C3V3 ZMM55C2V4 ZMM55C2V7 ZMM55C3V0 ZMM55C3V6 ZMM55C3V9 ZMM55C4V3
Contextual Info: ZMM55C Series Surface Mount Zener Diodes P b Lead Pb -Free SMALL SIGNAL ZENER DIODES 0.5 WATTS Features: *5 0 0 m w Power Dis s ipation *Genelral P urpos e , Medium Current *Ideal for S urface Mountted Application Mechanical Data: *Cas e : MIN I-ME L F Glas s Cas e (S OD-8 0 )

1600 v mosfet

Contextual Info: 2SK2166-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ _ - FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power

1N21B

Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
Contextual Info: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC

Contextual Info: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r

a2305

Abstract: A2307 2sk1969 N CH MOSFET
Contextual Info: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance

NA11-300-18

Contextual Info: DP Series N Series 15 & 40 Watts Single Outputs 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678