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    ED DIODE Search Results

    ED DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    ED DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3300 XL

    Contextual Info: P 2-6 APPLICATION NOTES P7 CIE CHROMATICITY DIAGRAM P 8-23 TECHNICAL DATA P 24-25 BIN CODE SYSTEMS TECHNICAL DATA Absolute maximum ratings TA=25° C E Hi.Eff.Red Orange H Bright Red SR Super Bright R ed SU R K H yp er R ed SU R H yp er R ed SUR-E H yp er R ed


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    PDF

    tda120XX

    Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
    Contextual Info: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications


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    -TDA110XX/N1F -TDA120XX/N1F UOCIII-TDA110XX-120XX/N1F tda120XX sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1 PDF

    MA10301

    Contextual Info: MA111 Variable Capacitance Diodes MA10301 Silicon epitaxial planer type Unit : mm For VCO INDICATES CATHODE Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    MA111 MA10301 MA10301 PDF

    MA3J147

    Abstract: MA147
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    2002/95/EC) MA3J147 MA147) MA3J147 MA147 PDF

    TL 2262

    Abstract: MA2Z360 MA360
    Contextual Info: Variable Capacitance Diodes MA2Z360 MA360 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For UHF and VHF electronic tuners (0.4) 5˚ • Large capacitance ratio • Small series resistance rD ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    MA2Z360 MA360) TL 2262 MA2Z360 MA360 PDF

    MA129

    Abstract: MA6X129
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 1.50+0.25 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol


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    2002/95/EC) MA6X129 MA129) MA129 MA6X129 PDF

    MA379

    Abstract: 7L marking diode 7L Marking
    Contextual Info: MA111 Variable Capacitance Diodes MA379 Silicon epitaxial planer type Unit : mm For UHF tuner INDICATES CATHODE Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    MA111 MA379 MA379 7L marking diode 7L Marking PDF

    CDST-56-G

    Abstract: CDST-70-G CDST-99-G sk sot-23
    Contextual Info: COAICHII» Small Signal Switching Diodes SMQDIodes S pocialisi CDST-99-G/ 70-G/ 56-G Reverse Voltage: 70 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge


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    CDST-99-G/ 200mA OT-23, MIL-STD-750, CDST-99-G CDST-70-G CDST-56-G OT-23 QW-B0002 CDST-56-G sk sot-23 PDF

    LN189S

    Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    LN189S LN189S PDF

    webcam circuit diagram

    Abstract: 47803 NXP 125 kHz RFID tag EM4001 webcam Schematic Diagram schematic satellite finder finder delay relay
    Contextual Info: NI myRIO Project Essentials Guide Ed Doering NI myRIO Project Essentials Guide Ed Doering Electrical and Computer Engineering Department Rose-Hulman Institute of Technology iv Printed April 23, 2014. Download the latest version at http://www.ni.com/myrio/project-guide.


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    be/kW4v16GuAFE, be/1Oib10sojds, webcam circuit diagram 47803 NXP 125 kHz RFID tag EM4001 webcam Schematic Diagram schematic satellite finder finder delay relay PDF

    IEC1000-4-2

    Abstract: MAZW000H MAZW062H MAZW068H MAZW082H MAZW100H MAZW120H
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZW000H Series Silicon planar type Unit: mm 0.33+0.05 –0.02 For surge absorption circuit 0.10+0.05 –0.02 1 2 0.15 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    2002/95/EC) MAZW000H IEC1000-4-2 MAZW062H MAZW068H MAZW082H MAZW100H MAZW120H PDF

    CDSH3-221-G

    Contextual Info: COAICHII» Small Signal Switching Diodes SMO Diodes CDSH3-221-G Voltage: 20 Volts Average forward c u rre n t: 100 mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge


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    CDSH3-221-G OT-323, MIL-STD-750, OT-523 CDSH3-221-G) QW-B0010 CDSH3-221-G PDF

    MA207

    Abstract: 2SK1609 2sk16
    Contextual Info: 2SK1609 Switching Diodes MA207 Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 connection 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    2SK1609 MA207 MA207 2SK1609 2sk16 PDF

    MA3Z080D

    Abstract: MA3Z080E MA80WA MA80WK
    Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 • Features 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    MA3Z080D, MA3Z080E MA80WA, MA80WK) MA3Z080D MA3Z080E MA80WA MA80WK PDF

    smd diode Uj

    Contextual Info: COAICHII» Small Signal Schottky Diodes SMQDIodes S pocialisi CDBH3-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit pro tectio n .


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    CDBH3-54/S/C/A-G 200mA OT-23, MIL-STD-750, OT-523 QW-BA010 CDBH3-54/S/C/A-G) smd diode Uj PDF

    m1b marking

    Abstract: MA4S111
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4S111 Silicon epitaxial planar type 1.6±0.05 1.0±0.05 For switching circuits 3 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    2002/95/EC) MA4S111 m1b marking MA4S111 PDF

    MA2J7320G

    Abstract: MA3X704A SMini2-F3
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J7320G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    2002/95/EC) MA2J7320G MA3X704A MA2J7320G MA3X704A SMini2-F3 PDF

    MA196

    Abstract: MA2C196
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2C196 (MA196) Silicon epitaxial planar type For switching circuits M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    2002/95/EC) MA2C196 MA196) MA196 MA2C196 PDF

    MA175WK

    Abstract: MA176WK MA3V175E MA3V176E CT PR 3002
    Contextual Info: Switching Diodes MA3V175E, MA3V176E MA175WK, MA176WK Silicon epitaxial planar type Unit : mm For switching circuits 4.0±0.2 • Features (0.8) 0.75 max. nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    MA3V175E, MA3V176E MA175WK, MA176WK) MA3V175E MA175WK MA176WK MA3V175E MA3V176E CT PR 3002 PDF

    MA27V18

    Abstract: ue 1005
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V18 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


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    2002/95/EC) MA27V18 MA27V18 ue 1005 PDF

    MA2Z368

    Abstract: MA368
    Contextual Info: Variable Capacitance Diodes MA2Z368 MA368 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For UHF and SHF electronic tuners 1.7±0.10 • Features 5˚ (0.4) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    MA2Z368 MA368) MA2Z368 MA368 PDF

    MA2SV07

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA2SV07 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. 1 0.8±0.1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    2002/95/EC) MA2SV07 MA2SV07 PDF

    MA182

    Abstract: MA2B182
    Contextual Info: Switching Diodes MA2B182 MA182 Silicon epitaxial planar type Unit : mm φ 0.56 max. For high-voltage switching circuits, small power rectification 1 • Features 4.5 max. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    MA2B182 MA182) DO-35 MA182 MA2B182 PDF

    MA26111

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA26111 Silicon epitaxial planar type For switching circuits Unit: mm • Features 1 ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    2002/95/EC) MA26111 MA26111 PDF