ED188512 Search Results

Contextual Info: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin

GDIP1-T32

Abstract: CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B
Contextual Info: REVISIONS LTR ] DESCRIPTION DATE APPRO VED YR-MO-DA A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R 145-97. 96-11-27 Raymond Monnin B Add note 4 / to \ \ j\ _ q z ’ ^ D R ’ anc* *R 'n tab'e Add note 5/ to % |_qx.

ED188512CA20N36B

Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
Contextual Info: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version

EDI88512C

Abstract: ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB The32 ed188512
Contextual Info: ELEC TRO NIC ^ E D D ES IG N S IN C SIE D • 3230114 0QD123Ö 550 M E L D E D I8 8 5 1 2 C I _ EI«drort c D rtg n * Inc. ■ — ■ — Four Megabit Monolithic SRAM h w y /M 512Kx8 Static RAM CMOS, Monoiithic F M ñ T []© íj

ED188512CA17

Abstract: EDI88512CA20N36B 2A153 ED188512CA
Contextual Info: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version

Contextual Info: ZEDÌ EDI88512C Electronic Daslgns Inc. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic D i F [ R » Y f l © i Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The32 pin DIP pinout adherestothe JEDEC standard for the four megabit device.

EDI88512C55NB

Abstract: EDI88512LP100CB power 22E dip EDI88128C EDI88512C EDI8M8512C EDI88512C55N
Contextual Info: * * Ê2EDI_ ELECTRONIC DESIGNS INC. — EDI88512C Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a iU The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin

Contextual Info: ^ E D EDI88257C l 2S6Kx8 Static Ram ElECIROMC DESK5N& NC. 256Kx8 Static RAM CMOS, Module F e a tu r e s The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the JEDEC standard forthe two Random Access Memory

ED188512C

Contextual Info: E D I885 12C ^ E D I Electronic D#rignf Inc.« Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic C M O S Static RAM. The32 pin DIP pinoutadheres tothe JEDEC standard for 512Kx8 bit C M O S Static

ED188512LP85NB

Contextual Info: E D I8 8 5 1 2 C W D I ELECTRONIC DESIGNS INC. • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin

ED188512CA25CB

Contextual Info: ^EDI EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 5962-95600 Features 512Kx8 Static RAM CMOS, Monolithic 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs