EE-25 EL Search Results

PALCE29M16

Abstract: PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

Contextual Info: COM’L: H-25 Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Register/Latch Preload permits full logic verification High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability

Contextual Info: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

PALCE29M16H/4

Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

PALCE29M16

Abstract: PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

pt 2358

Abstract: PALCE29MA16 PALCE29MA16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE

Contextual Info: COM’L: H-25 H Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability Register/Latch Preload permits full logic

Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM'L: H-25 il PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic need Aicro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: COM’L: H-25 Advanced Micro Devices PALCE29M A16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

pt 2358

Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

pt 2358

Abstract: PALCE29MA16 PALCE29MA16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

gal programming algorithm

Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE

Contextual Info: DATE REVISIONS REV DRAWING NUMBER PRELIMINARY REV OED-ST509F3L60 ELECTRO-OPTICAL CHARACTERISTICS TA=25°C PARAMETER SYMBOL COLLECTOR DARK CURRENT Iceo Vceo= 10V Ee=0.5mw/cm 2 COLLECTOR LIGHT CURRENT Ic Vce= 5V Ee=0.5mw/cm 2 Vce sat Ic= mA 0.2 Ee=0.5mw/cm

Contextual Info: COM’L: H-25 A M D ÍI PALCE29M16H-25 V 24-Pin EE CMOS Programmable Array Logic A N T I S DISTINCTIVE CHARACTERISTICS Register/Latch Preload permits full logic verification • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability

ic pt 2358

Abstract: pt 2358 g6 amd
Contextual Info: AMDZI COM’L: H-25 PALCE29M A16H-25 T 24-Pin EE CMOS Programmable Array Logic V A W T I S AN AME» COMPANY DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammabllity ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM’L: H-25 AMDÌ1 PALCE29M16H-25 V A \ 24-Pin EE CMOS Programmable Array Logic AN A M D T I S C O M P A N Y DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: STANDARD DC SPECIFICATIONS SYNERGY ECLinPS and ECLinPS LITE™ SEMICONDUCTOR 10K SERIES DC ELECTRICAL CHARACTERISTICS«1 V ee = V ee M in.) to V ee (M ax.); V c c = G N D (4> OC -40°C Symbol Parameter +25’ C +85C Min. Max. Min. Max. Min. Max. Min.

Contextual Info: FINAL AMDÌ1 COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic V A N A M A M D T I S C O M P A N Y DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability

pal 007a

Abstract: PT 2299 PAL 002a PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024 ttl pl 2303
Contextual Info: COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: JUL 2 9 199 COM’L PALCE29MA16H-25 Advanced Micro Devices 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High-performance sem icustom logic replacement; Electrically Erasable EE) technology allows reprogrammability