EEPROM 28C256 Search Results

Contextual Info: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUTS I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation

d2803

Abstract: 32K x 8-Bit EEPROM
Contextual Info: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUT I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation

LGLQ

Abstract: 28C256 32KX8 32-PIN
Contextual Info: • MARCH 1990 FLESSE Y SEMICONDUCTORS PRELIMINARY INFO RM ATIO N PNC28C256 CMOS/SNOS EEPROM HIGH PERFORMANCE 32KX8 ELECTRICALLY ERASABLE PROM The PNC28C256 is a high performance EEPROM fabricated with Plessey Sem iconductors’ proprietary CMOS/SNOS technology. This full-featured device follows

eeprom 2816

Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Contextual Info: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel

Contextual Info: HTEE25608 High Temperature EEPROM 256Kb Features n 256kb EEPROM n Operating temperature range of -55°C to +225°C n Single +5 V analog supply n Serial and Parallel interface n SPI serial communications n Integrated high voltage supply n Page and Byte write capability

D28C256

Contextual Info: NEC JUPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿/PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 32,768 x 8 bits and fabricated with an ad­ vanced CMOS process for high performance and low

Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

CAT28C256L12

Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

1N914

Abstract: 28C256 CAT28C256 MS-011 MS-016
Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

28C256TRP-120

Abstract: 28C256TRP-150
Contextual Info: SPACE ELECTRONICS INC. 256K-BIT EEPROM - 32K X 8 EEPROM SPACE PRODUCTS 28C256TRP A14 1 28 VCC A12 2 27 WE VCC A7 3 26 A13 GND A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O 7 I/O 0 11 18 I/O 6 I/O 1 12 17 I/O 5 I/O 2 13 16

EEPROM 28C256

Abstract: 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)

28C256APC-2

Abstract: hex55
Contextual Info: Turbo IC, Inc. 28C256A HIGH SPEED CMOS 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 32K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

Contextual Info: 11E » SEEÛ TECHNOLOGY INC • a i n S 3 3 QQOEbTÔ fl MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features SEEQ's MM28C010 is a CMOS 5 V only, 128Kx8Electrically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K

sumitomo epoxy 6600

Abstract: sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256
Contextual Info: Parallel EEPROM 256Kbit Qualification Summary § Component Design & Construction Description § Test Summary Oper Life Test Data Retention Endurance Rel Humidity Autoclave Temp Cycle ESD Latch-up Electrical Dist./Char. available per request Plastic Package (TSOP, SOIC, PLCC)

Contextual Info: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC

23C8001A

Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28

28 pin 28c256

Abstract: CAT28C256 1N914 28C256 28C256-12 28C256-15 CAT28C256NI-15T
Contextual Info: CAT28C256 32K-Bit Parallel EEPROM FEATURES • Fast Read Access Times: 120/150ns ■ Hardware and Software Write Protection ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: –1 to 64 Bytes in 5ms –Page Load Timer –Active: 25 mA Max.

free circuit eeprom programmer

Contextual Info: CAT28C256 256K-Bit PARALLEL EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max

KM28C256-15

Abstract: 28c256 samsung
Contextual Info: KM28C256 CMOS EEPROM 32Kx8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte W rite & Page W rite — Single TTL Level W rite Signal — Internal Address and Data Latch

1N914

Abstract: 28C256 28C256-12 28C256-15 CAT28C256 CAT28C256NI-15T
Contextual Info: CAT28C256 256K-Bit Parallel EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max

Contextual Info: KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write — Single TTL Level Write Signal — Internal Address and Data Latch

5555 is 6 pin smd ic

Abstract: A14A smd smd A14A
Contextual Info: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ H igh S peed • 150 n s ec M axim um A ccess Time ■ L o w P ow er C M O S Technology • 8 0 m A A ctive C urrent • 35 0 fjA S tan db y Current ■ Fast W rite C ycle Times

Contextual Info: E/M28C256A 256K High Speed EEPROM November 1989 PRELIMINARY DATA SHEET FEATURES • Military and Extended Temperature Range • -55° C to +125° C Operation Military . -40° C to +85° C Operation (Extended) High Endurance • 10,000 Cycles/Byte • 10 Year Data Retention

M28C256A

Contextual Info: E/M28C256A 256K High Speed EEPROM PRELIMINARY DATA SHEET November 1989 FEATURES • Military and Extended Temperature Range • -55° C to +125° C Operation Military • -40° C to +85° C Operation (Extended) High Endurance • 10,000 Cycles/Byte • 10 Year Data Retention