EF800 Search Results

Contextual Info: Surge arrester 2-electrode arrester Series/Type: Ordering code: EF800X B88069X2641* Version/Date: Version: Issue 05 / 2013-09-04 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible . This ensures that the table disappears for the customer

EF800X

Abstract: B88069X2641 S102 T502 ef800
Contextual Info: 2-electrode arrester Series/Type: Ordering code: EF800X B88069X2641xxxx a Version/Date: Version: Issue 03 / 2008-01-18 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible). This ensures that the table disappears for the customer

Contextual Info: 2-electrode arrester Series/Type: Ordering code: EF800X B88069X2641xxxx a Version/Date: Version: Issue 03 / 2008-01-18 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible). This ensures that the table disappears for the customer

EF800

Abstract: EF800X
Contextual Info: Surge Arrester 2-Electrode-Arrester EF800X Ordering code: T. B. D. Preliminary data DC spark-over voltage 1 2) 680 … 1000 V Impulse spark-over voltage at 100 V/µs - for 99 % of measured values - typical values of distribution < 1200 < 1000 V V < 1300 < 1100

EF800X

Abstract: EPCOS 800 S102 T502 B88069X2641
Contextual Info: Surge Arrester 2-Electrode-Arrester EF800X Ordering code: B88069X2641xxxx a DC spark-over voltage 1) 2) 680 … 1000 V Impulse spark-over voltage at 100 V/µs - for 99 % of measured values - typical values of distribution < 1200 < 1000 V V < 1300 < 1100 V

A81DC

Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

L256MH113R

Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

s29gl032m10tair

Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics

beam Tube 6L50

Abstract: EF860 em80 tube EF80 pentode tube em84 6dj8 tube el500 ECL86 1T4T ecc189
Contextual Info: OW'C e \e c v \w\»e S R E C E I V IN G P IC T U R E T U B ES T U B ES C A T H O D E - R A Y R E C T IF IE R T U B E S T U B E S T R A N S M IT T IN G M O D U L A T I N G IM P U L S E T U B E S T U B ES TU B ES K L Y S T R O N S M A G N E T R O N S T R A V E L L I N G

L256ML

Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

29gl064

Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,

sa330

Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
Contextual Info: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced

S29GL128P

Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For

BA512

Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

29gl064

Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,

EF800

Abstract: ef800 tube telefunken ef telefunken ef800 TELEFUNKEN telefunken tubes TELEFUNKEN e tele 539 telefunken EF 12
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel o E F 800 u TELEFUNKEN H F /Z F -P e n t o d e R F / IF -P e n t o d e Zuverlässigkeit Reliability D e r P -F a k to r g ib t d e n v o ra u ss ic h tlic h e n R ö h r e n ­

E78000

Abstract: SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

8A0000

Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics