EHA07179 Search Results

BAT15-05W

Abstract: VSO05561 noise diode
Contextual Info: BAT15-05W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W

DIODE T4 A1

Abstract: diode marking T4
Contextual Info: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration

VSO05561

Abstract: diode bat 85
Contextual Info: BAT 15-05W Silicon Schottky Diode • DBS mixer applications up to 12 GHz 3 • Low noise figure • Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

SC-75

Contextual Info: BAV 70T Silicon Switching Diode Array Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV 70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC-75 Maximum Ratings Parameter

BBY53-05W

Abstract: VSO05561
Contextual Info: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Abstract: w1901
Contextual Info: BAV 70W Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV 70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol

VSO05561

Contextual Info: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2

VSO05561

Abstract: BBY52-05W
Contextual Info: BBY52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package

Contextual Info: BBY 53-05W Silicon Tuning Diode 3
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation for VCO's in mobile communications equipment
High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W

SC75

Abstract: BAV70T
Contextual Info: BAV70T Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BBY 53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W

Contextual Info: BBY53-05W 3 Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment
High ratio at low reverse voltage 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type BBY53-05W Marking S7s

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

2a2 SOT-23

Abstract: marking code BB bb814
Contextual Info: BB 814 Silicon Variable Capacitance Diode 3 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking 2 • Coded capacitance groups and group matching

DIODE marking A2 SCD80

Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Contextual Info: BAR63. Silicon PIN Diodes
PIN diode for high speed switching of RF signals
Very low forward resistance low insertion loss
Very low capacitance (high isolation)
For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05

CT10

Abstract: VSO05561
Contextual Info: BBY 55-05W Silicon Tuning Diode 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment • Very low capacitance spread 1 VSO05561

BBY66-05W

Abstract: VSO05561 diode A2 9 diode MARKING 354
Contextual Info: BBY66-05W Silicon Tuning Diode Preliminary data 3
High capacitance ratio
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation for VCO's in mobile communications equipment 2
Very low capacitance spread 1 C1/C2 3 1 2 A1 A2 VSO05561

Contextual Info: BAR 64 . W 3 Silicon PIN Diode
High voltage current controlled RF resistor for RF attenuator and switches 2
Frequency range above 1MHz
Low resistance and short carrier lifetime 1
For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W

Contextual Info: BBY 57-05W Silicon Tuning Diode Preliminary data 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation 1 for VCO’s in mobile communications equipment

BBY57-05W

Abstract: VSO05561
Contextual Info: BBY57-05W 3 Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode 2
Low series inductance
High capacitance ratio 1
Designed for low tuning voltage operation VSO05561 for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs

A2 diode

Abstract: marking c2 diode VSO05561
Contextual Info: BBY 57-05W Silicon Tuning Diode 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 • For control elements such as TCXOs and VCXOs

Pin diode G4S

Abstract: VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1

VSO05561

Contextual Info: BBY 55-05W Silicon Tuning Diode Preliminary data 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • Very low capacitance spread