VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
|
Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
|
Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
|
Original
|
PDF
|
BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
|
DIODE marking A2 SCD80
Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Text: BAR63. Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance low insertion loss Very low capacitance (high isolation) For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05
|
Original
|
PDF
|
BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-04S
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
DIODE marking A2 SCD80
BAR63-02W
BAR63-02L
BAR63-02V
BAR63
|
Untitled
Abstract: No abstract text available
Text: BAR 64 . W 3 Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches 2 Frequency range above 1MHz Low resistance and short carrier lifetime 1 For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W
|
Original
|
PDF
|
4-04W
4-05W
VSO05561
4-06W
EHA07181
EHA07187
EHA07179
OT-323
|
Pin diode G4S
Abstract: VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
|
Original
|
PDF
|
3-04W
3-05W
3-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
Pin diode G4S
VSO05561
|
BAR64
Abstract: BAR64-04W BAR64-05W BAR64-06W VSO05561
Text: BAR64.W 3 Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches 2 Frequency range above 1 MHz up to 3 GHz Low resistance and long carrier lifetime 1 Very low capacitance at zero volts reverse VSO05561 bias at frequencies above 1 GHz
|
Original
|
PDF
|
BAR64.
VSO05561
BAR64-04W
BAR64-05W
BAR64-06W
EHA07181
EHA07187
EHA07179
OT323
BAR64
BAR64-04W
BAR64-05W
BAR64-06W
VSO05561
|
VSO05561
Abstract: No abstract text available
Text: BAR 64 . W Silicon PIN Diode 3 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz Low resistance and short carrier lifetime 2 For frequencies up to 3 GHz 1 BAR 64-04W BAR 64-05W C1/A2 3 BAR 64-06W
|
Original
|
PDF
|
4-04W
4-05W
4-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
VSO05561
|