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    BCR08PN

    Abstract: VPS05604
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Jul-12-2001 BCR08PN VPS05604

    BAT62-08S

    Abstract: VPS05604
    Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4  Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604


    Original     		PDF BAT62-08S OT-363 VPS05604 EHA07193 EHA07291 OT363 EHD07061 900MHz EHD07063 BAT62-08S VPS05604

    BC847PN SOT363

    Abstract: VPS05604 BC847PN Marking 1ps sot
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 VPS05604 BC847PN Marking 1ps sot

    BAS16S

    Abstract: VPS05604 4C3 diode
    Text: BAS16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original     		PDF BAS16S OT-363 VPS05604 EHA07193 EHA07291 OT363 Jul-06-2001 EHB00025 BAS16S VPS05604 4C3 diode

    VPS05604

    Abstract: WFs transistor
    Text: BCR 08PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) 2 1 VPS05604


    Original     		PDF VPS05604 OT-363 EHA07193 EHA07176 OT-363 Oct-19-1999 VPS05604 WFs transistor

    W1s transistor

    Abstract: marking W1S BCR10PN VPS05604
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BCR10PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Nov-29-2001 W1s transistor marking W1S BCR10PN VPS05604

    BCR15PN

    Abstract: infineon marking W1s BCR108S E6327 VPS05604 marking code w1s
    Text: BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604


    Original     		PDF BCR15PN VPS05604 OT-363 EHA07193 EHA07176 OT363 BCR15PN infineon marking W1s BCR108S E6327 VPS05604 marking code w1s

    Untitled

    Abstract: No abstract text available
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original     		PDF BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jan-28-2002

    h11e

    Abstract: transistor BC 660
    Text: BC846PN NPN/PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BC846PN VPS05604 EHA07193 OT-363 EHA07177 OT363 h11e transistor BC 660

    Untitled

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BCR10PN VPS05604 EHA07193 OT-363 EHA07176 OT363

    transistor digital 47k 22k PNP NPN

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor digital 47k 22k PNP NPN

    transistor marking code wts

    Abstract: Marking W1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN EHA07193 EHA07176 OT-363 OT363 transistor marking code wts Marking W1s

    SOT363-Package

    Abstract: VPS05604
    Text: BCR 22PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) 2 1 VPS05604


    Original     		PDF VPS05604 OT-363 EHA07193 EHA07176 OT-363 Oct-19-1999 SOT363-Package VPS05604

    marking WPs

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		PDF BCR22PN EHA07176 EHA07193 OT-363 OT363 marking WPs

    MMIC SOT 363 marking CODE 77

    Abstract: SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 W • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


    Original     		PDF P-SOT363-6-1 Q62702 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


    Original     		PDF 62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode

    VPS05604

    Abstract: No abstract text available
    Text: %$7 6 6LOLFRQ 6FKRWWN\ 'LRGH $UUD\ 3UHOLPLQDU\ GDWD 4 • Low barrier diode for detectors up to GHz 5 6 frequencies 7DSH ORDGLQJ RULHQWDWLRQ Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1


    Original     		PDF OT-363 VPS05604 EHA07193 EHA07291 62-08S OT-363 EHD07061 900MHz EHD07063 EHD07062 VPS05604

    VPS05604

    Abstract: No abstract text available
    Text: BAS 16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original     		PDF OT-363 VPS05604 EHA07193 EHA07291 OT-363 Aug-09-1999 EHB00025 EHB00022 VPS05604

    BCR08PN

    Abstract: BCR108S E6327 VPS05604 marking code w1s
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 BCR08PN BCR108S E6327 VPS05604 marking code w1s

    gs 3935

    Abstract: ZS 1032 BGA428 GPS05604 DCS1800 PCS1900 VPS05604 09035 pgs marking
    Text: Preliminary BGA428 High Gain, Low Noise Amplifier BGA428 Features • • • • • • • 4 High gain, GMA=20dB at 1.8GHz Low noise figure, NF=1.4dB at 1.8GHz Prematched Ideal for GSM, DCS1800, PCS1900 Open collector output Typical supply voltage: 2.4-3V


    Original     		PDF BGA428 BGA428 DCS1800, PCS1900 VPS05604 OT-363 EHA07193 OT363 T0527 gs 3935 ZS 1032 GPS05604 DCS1800 PCS1900 VPS05604 09035 pgs marking

    infineon marking W1s

    Abstract: INFINEON PART MARKING SOT363 T0509 BGA430 GPS05604 VPS05604
    Text: Pre li mi na ry d at a she et , BG A4 30 , Ap ri l 20 01 y BGA430 li m in ar B r oa d B a nd H i gh G ai n L NA P re MMIC W ir el e s s S il i c o n Di s c r e te s N e v e r s t o p t h i n k i n g . Edition 2001-04-24 Published by Infineon Technologies AG,


    Original     		PDF BGA430 D-81541 100pF GPS05604 infineon marking W1s INFINEON PART MARKING SOT363 T0509 BGA430 GPS05604 VPS05604

    MMIC SOT 363 marking CODE 77

    Abstract: SMD Transistor Marking Code 71 SOT 23 SOT363-6 TRANSISTOR SMD CODE 6.8 MMIC SOT 363 marking CODE 82 y5s 0.022 SOT 363 marking code 62 low noise 59w smd smd marking code vd VD F1 SMD
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 Ω • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


    Original     		PDF P-SOT363-6-1 Q62702 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 SMD Transistor Marking Code 71 SOT 23 SOT363-6 TRANSISTOR SMD CODE 6.8 MMIC SOT 363 marking CODE 82 y5s 0.022 SOT 363 marking code 62 low noise 59w smd smd marking code vd VD F1 SMD

    846PN

    Abstract: VQE 11E
    Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    OCR Scan     		PDF 846PN EHA07193 846PN Q62702-C2537 OT-363 VQE 11E

    A6S marking code

    Abstract: No abstract text available
    Text: SIEMENS BAS 16S Silicon Sw itching Diode Array • For high-speed switching applications • Internal galvanic isolated Diodes in one package Tape loading orientation Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device


    OCR Scan     		PDF EHA07193 EHA0729I Q62702-A1241 OT-363 EHN00016 100ns, A6S marking code