EHN00016 Search Results
EHN00016 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BAS16-02W
Abstract: BAS1602W SCD80
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Original |
BAS16-02W VES05991 SCD80 Aug-29-2001 EHB00025 BAS16-02W BAS1602W SCD80 | |
BAS16S
Abstract: VPS05604 4C3 diode
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Original |
BAS16S OT-363 VPS05604 EHA07193 EHA07291 OT363 Jul-06-2001 EHB00025 BAS16S VPS05604 4C3 diode | |
Q62702-A1239Contextual Info: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage |
Original |
6-02W VES05991 Q62702-A1239 SCD-80 Jul-24-1998 EHB00023 Q62702-A1239 | |
A6S marking codeContextual Info: SIEMENS BAS 16S Silicon Sw itching Diode Array • For high-speed switching applications • Internal galvanic isolated Diodes in one package Tape loading orientation Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device |
OCR Scan |
EHA07193 EHA0729I Q62702-A1241 OT-363 EHN00016 100ns, A6S marking code | |
Contextual Info: BAS 16-02W Silicon Switching Diode • For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS 16-02W 3 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current |
Original |
6-02W VES05991 SCD-80 EHB00025 Oct-08-1999 | |
VPS05604Contextual Info: BAS 16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2 |
Original |
OT-363 VPS05604 EHA07193 EHA07291 OT-363 Aug-09-1999 EHB00025 EHB00022 VPS05604 | |
C2C36
Abstract: VPW09197 BAS21U SC74
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Original |
BAS21U VPW09197 EHA07291 EHB00028 Aug-07-2001 C2C36 VPW09197 BAS21U SC74 | |
Contextual Info: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74 |
Original |
VPW09197 EHA07291 SC-74 Apr-21-1999 EHB00025 EHB00022 | |
transistor a1241
Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
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Original |
VPS05604 Q62702-A1241 OT-363 Apr-24-1998 EHB00025 EHB00022 transistor a1241 A1241 transistor a1241 datasheet VPS05604 5-30K | |
marking 6c1
Abstract: BAS16U SC74
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Original |
BAS16U VPW09197 EHA07291 Jul-06-2001 EHB00025 EHB00022 marking 6c1 BAS16U SC74 | |
SC74
Abstract: JSs diode
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Original |
VPW09197 EHA07291 SC-74 Apr-16-1999 EHB00029 EHB00027 SC74 JSs diode | |
Contextual Info: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75 |
OCR Scan |
6-02W Q62702-A1239 SCD-80 100//A EHN00016 100ns, |