marking code s2a SOT23
Abstract: smbt3906 MMBT3906 infineon
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
marking code s2a SOT23
smbt3906
MMBT3906 infineon
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SMBT3906U
Abstract: No abstract text available
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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PDF
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
EHP00773
EHP00764
Jul-11-2001
SMBT3906U
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ic power 22E
Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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Original
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PDF
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
EHP00773
EHP00764
Nov-30-2001
ic power 22E
H12E
h11E
SMBT3906U
1N916
SC74
SMBT3904U
EHP00768
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SMBT3906S
Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
Text: SMBT3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT3904S (NPN)
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Original
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PDF
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SMBT3906S
100mA
SMBT3904S
VPS05604
EHA07175
OT363
EHP00773
EHP00764
Nov-30-2001
SMBT3906S
TRANSISTOR SMBT3906S
1N916
SMBT3904S
VPS05604
H12E
ic power 22E
EHP00768
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Untitled
Abstract: No abstract text available
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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Original
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PDF
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
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power 22E
Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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PDF
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Aug-20-2001
EHP00769
power 22E
TRANSISTOR S2A
s2A SOT23
1N916
SMBT3904
SMBT3906
H12E
sot23 transistor marking 12E
IC MARKING NS-05
marking s2A
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H12E
Abstract: SMBT3906U
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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Original
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PDF
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
H12E
SMBT3906U
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power 22E
Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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Original
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PDF
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Nov-30-2001
EHP00769
power 22E
TRANSISTOR S2A
SMBT3906
1N916
SMBT3904
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SMBT3906U
Abstract: No abstract text available
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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Original
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PDF
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
SMBT3906U
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ic power 22E
Abstract: 1N916
Text: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)
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Original
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3906U
100mA
3904U
VPW09197
EHA07175
SC-74
EHP00773
EHP00764
Oct-14-1999
ic power 22E
1N916
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3906
Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Text: SMBT 3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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100mA
VPS05161
OT-23
EHP00772
EHP00773
Oct-14-1999
EHP00768
EHP00769
3906
transistor 3906
k0300
H12E
1N916
EHP00772
3906 pnp
ic power 22E
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ic power 22E
Abstract: SMBT 3904S 1N916 3904S VPS05604
Text: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)
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3906S
100mA
3904S
VPS05604
EHA07175
OT-363
EHP00773
EHP00764
Jan-26-1998
ic power 22E
SMBT 3904S
1N916
3904S
VPS05604
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MMBT3906
Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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PDF
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
EHP00771
EHP00768
Jul-28-2003
MMBT3906
SMBT3906
EHP00772
TRANSISTOR S2A
1N916
MMBT3904
SMBT3904
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Untitled
Abstract: No abstract text available
Text: SMBT3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT3904S (NPN)
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Original
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PDF
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SMBT3906S
100mA
SMBT3904S
VPS05604
EHA07175
OT363
EHP00773
EHP00764
Jul-11-2001
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