EHP00772 Search Results

marking code s2a SOT23

Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

SMBT3906U

Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3904U (NPN)

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

ic power 22E

Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3904U (NPN)

SMBT3906S

Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
Contextual Info: SMBT3906S PNP Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT3904S (NPN)

Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

transistor marking S2A

Abstract: SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Q62702-A1202

Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

power 22E

Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

H12E

Abstract: SMBT3906U
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3904U (NPN)

power 22E

Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

TRANSISTOR S2A

Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

ic power 22E

Abstract: 1N916
Contextual Info: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)

3906

Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Contextual Info: SMBT 3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

ic power 22E

Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)

MMBT3906

Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

s2A SOT23

Abstract: marking s2A sot23 SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: SMBT3906S PNP Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT3904S (NPN)

transistor marking s2a

Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types: