EL85 Search Results

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR PHOTOCOUPLER EL851 Series Schematic Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) • High isolation voltage between input and output (Viso=5000 V rms )

Contextual Info: 4 PIN DIIP HIGH H VOLTA AGE PH HOTOTR RANSIST TOR P PHOTOC COUPLER E EL851 S Series Schematic S F Features: • High colle ector- emitter voltage VCEO C =350V • Current trransfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) = • High isola ation voltage e between inp

EL851

Abstract: PHOTOCOUPLER
Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR EL851 series PHOTOCOUPLER Features • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 50 to 600% at IF =5mA, VCE =5V) • High isolation voltage between input and output Viso = 5000 Vrms

TRANSISTOR SMD MARKING CODE p1

Abstract: EL series SMD transistor 815Y EL852 smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTODARLINGTON PHOTOCOUPLER EL852 Series Schematic Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector Features: •High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V)

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTODARLINGTON PHOTOCOUPLER EL852 Series Schematic Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector Features: •High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V)

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTODARLINGTON PHOTOCOUPLER EL852 Series Schematic Features: •High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR EL851 series PHOTOCOUPLER Features • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 50 to 600% at IF =5mA, VCE =5V) • High isolation voltage between input and output Viso = 5000 Vrms

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR PHOTOCOUPLER EL851 Series Schematic Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) • High isolation voltage between input and output (Viso=5000 V rms )

EL85

Abstract: Mullard 2x15
Contextual Info: O U T P U T PENTODE Output pentode rated for 6 W anode dissipation intended for use in mobile equipment as a r.f. amplifier at frequencies up to 120 M c /s or as an a.f. output valve. EL85 HEATER V„ lh C A P A C IT A N C E S ca_gi Cm Cout 6.3 200 V mA < 0 .2

EL85

Abstract: EL42 Mullard PENTODE
Contextual Info: O U T P U T PENTODE O u tp u t pentode w ith an anode d issip a tio n o f 6 W , su ita b le fo r use in c a r radio receivers. The lim iting values, characteristics and audio performance of the EL42 and EL85 are identical. The basing and dimensions of the EL42 are shown below.

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )

Contextual Info: DESCRIPTION CRO EL85 NPN SILICON PHOTO TRANSISTOR EL85 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.

MSM77C20

Abstract: PROCESSOR-MSM77C20A MSM77C20A KLM 3-L EL85 DPS 300 RP -3 C
Contextual Info: O K I semiconductor ilp < MSM77C20A DIGITAL SIGNAL PROCESSOR GENERAL DESCRIPTION The MSM77C20A is an LSI designed fo r d ig ita l signal processing for speech processing and telecom munications. Since this LSI is the one-chip m icrocom puter contained the ROM, RAM, ALU, and m u ltip lie r, it is

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group