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    ELECTROMAGNETIC PULSE JAMMERS Search Results

    ELECTROMAGNETIC PULSE JAMMERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd

    ELECTROMAGNETIC PULSE JAMMERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hearing aid chip

    Abstract: Chirp Spread Spectrum electromagnetic pulse generator kit Xilinx Ethernet development arc welder circuit Nanotron Technologies nanoNET system specifications RF basics ADC hard radiation wireless optical mouse controller
    Text: nanoNET TRX RF Performance Evaluation Kit User Manual Version 1.02 nanoNET TRX RF Performance Evaluation Kit User Manual Document Information Document Title: nanoNET TRX RF Peformance Evaluation Kit User Manual Version/Release number: 1.02 Released yyyy-mm-dd :


    Original     		PDF NA-04-0133-0290-1 hearing aid chip Chirp Spread Spectrum electromagnetic pulse generator kit Xilinx Ethernet development arc welder circuit Nanotron Technologies nanoNET system specifications RF basics ADC hard radiation wireless optical mouse controller

    CLF1G0035-100P

    Abstract: sot1228 electromagnetic pulse jammers
    Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 1 — 10 December 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.


    Original     		PDF CLF1G0035-100P; CLF1G0035S-100P CLF1G0035-100P CLF1G0035S-100P 1G0035S-100P sot1228 electromagnetic pulse jammers

    ATP10K100M

    Abstract: 100w1000 Amplifier Research LA250
    Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation


    Original     		PDF 250T1G3, 200T2G8A 250T8G18 January/3500 ATP10K100M 100w1000 Amplifier Research LA250

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.


    Original     		PDF CLF1G0035-100P; CLF1G0035S-100P CLF1G0035-100P CLF1G0035S-100P 1G0035S-100P

    PCE3667CT-ND

    Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 PCE3667CT-ND capacitor 56J pF a 69154 SOT1227A 200V470

    sot1227

    Abstract: 082279 SOT1227A Model 284J 226J
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 sot1227 082279 SOT1227A Model 284J 226J

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10

    ATC 600F

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 ATC 600F

    SOT1227A

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 SOT1227A

    AN11130

    Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original     		PDF CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 AN11130 Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30

    I1228

    Abstract: No abstract text available
    Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original     		PDF CLF1G0035-100 CLF1G0035-100 I1228

    30221

    Abstract: LR12010T0200J
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original     		PDF CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 30221 LR12010T0200J

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original     		PDF CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100

    Untitled

    Abstract: No abstract text available
    Text: Techniques for Precise Interference Measurements in the Field Using FieldFox handheld analyzers Application Note This application note discusses the different kinds of interference that operators will encounter in both current and new wireless environments. It introduces efficient and effective measurement techniques and instrument requirements for testing interference using modern highperformance spectrum analyzers such as Agilent FieldFox analyzers, which have the versatility


    Original     		PDF 5991-0418EN

    bc857b nxp

    Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 bc857b nxp C5750X7S2A106M Gan transistor C 1972 transistor

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original     		PDF CLF1G0035S-50 CLF1G0035S-50

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50

    100B102KW

    Abstract: AN11130 66-0304-00004-000 600F0R 96798
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 100B102KW AN11130 66-0304-00004-000 600F0R 96798

    MDD 1654

    Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
    Text: TELEDYNEMICROWAVE the complete microwave solution Table of Contents Company Profile. . . . . . . . . . . . . . . . . . . . . . . . . 5 Sub-Systems. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diplexers and Multiplexers. . . . . . . . . . . . . . . . . . . . . . . . . . 82


    Original     		PDF

    Trimble ocxo

    Abstract: doppler radar circuit for speed sensing airborne pulse doppler radar 24 GHz Microwave Doppler Radar Speed Sensor radio control helicopter circuit diagram advantages of mobile signal jammer circuit z cut quartz piezoelectric properties Camera Jammer Introduction to Radar microwave RADAR motion sensors
    Text: Reprinted from Ultrasonic Instruments and Devices 01999, Academic Press, Inc. The book is copyrighted, however this chapter is not, because the authors are employees of the U.S. Government and performed this work as part of their official duties. The work is therefore not subject to copyright protection.


    Original     		PDF CH-2000 LJFFC-34, UFFC-35, Trimble ocxo doppler radar circuit for speed sensing airborne pulse doppler radar 24 GHz Microwave Doppler Radar Speed Sensor radio control helicopter circuit diagram advantages of mobile signal jammer circuit z cut quartz piezoelectric properties Camera Jammer Introduction to Radar microwave RADAR motion sensors

    ph 4148 zener diode detail

    Abstract: sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration
    Text: ZiLOG Design Concepts Z8 Application Ideas AN004901-0900 ZILOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ WWW.ZILOG.COM ZiLOG Design Concepts Z8 Application Ideas This publication is subject to replacement by a later edition. To determine whether a later edition


    Original     		PDF AN004901-0900 Z86E31 Z86E40 Z86E83 Z8E001 Z8PE001 ph 4148 zener diode detail sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration