SOT1227 Search Results

Contextual Info: Package outline Earless Flanged ceramic package; 2 leads SOT1227B D A F 3 U1 w1 A B D1 D c w1 A B 1 H E1 U2 E 2 A w2 b B Q w2 5 mm b c D D1 H Q U1 U2 max 3.68 nom min 2.84 1.40 0.15 5.18 5.21 4.17 4.19 1.07 8.64 1.70 5.21 4.19 1.14 0.08 4.98 4.95 3.96 3.94 0.97

SOT1227A NXP

Contextual Info: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1227A D A F w1 D1 A B U1 B q c C w1 A B 1 H E1 p U2 E 3 2 A w1 w1 b A B C Q w2 5 mm b c D D1 H p Q max 3.68 nom min 2.84 1.40 0.15 5.18 5.21 4.17 4.19 1.14 8.64 2.67 1.70 1.14 0.08 4.98

sot979

Contextual Info: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)

Contextual Info: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

ATC 600F

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

PCE3667CT-ND

Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

SOT1227A

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、

sot1227

Abstract: 082279 SOT1227A Model 284J 226J
Contextual Info: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.