ELITE EY Search Results
ELITE EY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Elite Enterprises
Abstract: high flux LED Elite Enterprises H.K
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1P00S6W33B0CA0Z1 260for5sec Elite Enterprises high flux LED Elite Enterprises H.K | |
Contextual Info: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK ) |
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M13S128168A | |
M13S128168AContextual Info: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK ) |
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M13S128168A M13S128168A | |
Contextual Info: ESMT M14D1G1664A 2D DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D1G1664A | |
Contextual Info: ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK ) |
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M13S64164A | |
Contextual Info: ESMT M14D2561616A 2E Automotive Grade DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D2561616A | |
CKE 2009
Abstract: M13S128168A
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M13S128168A CKE 2009 M13S128168A | |
M14D256
Abstract: ESMT M14D2561616A M14D2561616A DDR2-667 DDR2-800
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M14D2561616A M14D256 ESMT M14D2561616A M14D2561616A DDR2-667 DDR2-800 | |
M14D2561616A
Abstract: DDR-533
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M14D2561616A M14D2561616A DDR-533 | |
Contextual Info: ESMT Preliminary M14D1G1664A (2S) DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D1G1664A | |
Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension |
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M13S128168A | |
CKE 2009
Abstract: M13S64164A CL301
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M13S64164A CKE 2009 M13S64164A CL301 | |
M14D5121632AContextual Info: ESMT M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D5121632A | |
M14D5121632AContextual Info: ESMT M14D5121632A 2C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D5121632A M14D5121632A | |
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Contextual Info: ESM T M14D5121632A 2C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D5121632A | |
Contextual Info: ESMT Preliminary M14D2561616A (2E) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D2561616A | |
Contextual Info: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D1G1664A | |
DDR II SDRAMContextual Info: ESMT DDR II SDRAM M14D128168A 2M 2M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D128168A DDR II SDRAM | |
Contextual Info: ESM T M14D2561616A Operation Temperature Condition TC -40 C~95 C DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle |
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M14D2561616A | |
M14D512
Abstract: M14D5121632A M14D5121 M14D5121632A -2.5B CKE 2009 MAKING A10 BGA DDR2-667 emrs3
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M14D5121632A M14D512 M14D5121632A M14D5121 M14D5121632A -2.5B CKE 2009 MAKING A10 BGA DDR2-667 emrs3 | |
M14D5121632A
Abstract: M14D512 M14D5121632A -2.5B DDR2-667 DDR2-800 M14D M14D5121
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M14D5121632A M14D5121632A M14D512 M14D5121632A -2.5B DDR2-667 DDR2-800 M14D M14D5121 | |
Contextual Info: ESMT Preliminary M14D1G1664A (2S) Automotive Grade DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle |
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M14D1G1664A | |
Contextual Info: ESM T M14D2561616A DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe DQS, DQS ; DQS can be disabled for single-ended data strobe operation. |
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M14D2561616A | |
M14D128168A
Abstract: 18BB
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M14D128168A M14D128168A 18BB |