EM 235 Search Results

Contextual Info: MOUNT QSS sirs -EM SERIES mm HIGH SPEED SPECIFICATIONS For complete specifications see www.samtec.com?QTS-EM or www.samtec.com?QSS-EM Insulator Material: Liquid Crystal Polymer Term inal Material: Phosphor Bronze C urrent Rating: Testing Now! Operating Tem p Range:

EM-406 gps

Abstract: sirf star III lp EM-406A
Contextual Info: EM-406a Version 1.4.1 GPS Engine Board EM-406a Globalsat Technology Corporation 16F., No. 186, Jian-Yi Road, Chung-Ho City, Taipei Hsien 235, Taiwan Tel: 886-2-8226-3799/ Fax: 886-2-8226-3899 service@globalsat.com.tw www.globalsat.com.tw USGlobalSat, Inc.

tc524259

Contextual Info: PRELIMINARY 262, 144WORDS X4BITS MULTIPORT DRAM DESCRIPTION The TC524259BJ/BZ is a CMOS m ultiport m em ory equipped w ith a 262,144-words by 4-bits dynam ic random access m em ory RAM p o rt ami a 512-words by 4-bits static serial access m em ory (SAM) port. The

MSM65355

Abstract: QFP100-P-1420-BK4 OLMS65K 33DP4
Contextual Info: O K I Semiconductor MSM65355 OLMS-65K Series CMOS 8-Bit Microcontroller GENERAL DESCRIPTION The* MSM65355 is a high-perform ance 8-bit m icrocontroller that em ploysO K l original nX-H/ 5DCPU core. The M SM 65355 includes 16K bytes of program m em ory, 384 bytes of data m em ory, an LCD

Contextual Info: OKI Semiconductor MSM65355 OLMS-65K Series CMOS 8-Bit Microcontroller G EN ER AL DESCRIPTION The* M SM 65355 is a high-perform ance 8-bit m icrocontroller that em p lo y sO K l original nX-H/ 5DCPU core. The M SM 65355 includes 16K bytes o f program m em ory, 384 bytes of data m em ory, an LCD

MCA680

Abstract: electrolytic capacitor 470 transistor Zo 105 NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B50Y transistor Common Base amplifier
Contextual Info: MZ0912B50Y Data sheet status Preliminary specification data of Issue July 1990 NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

Contextual Info: F-203 -EM 0,80 mm EDGE MOUNT HEADER BTE SERIES SPECIFICATIONS Mates with: BSE For complete specifications see www.samtec.com?BTE-EM APPLICATION SPECIFIC OPTION EDGE MOUNT CAPABILITY Insulator Material: Liquid Crystal Polymer Terminal Material: Phosphor Bronze

NPN Silicon Epitaxial Planar Transistor

Abstract: Zv-z 21 MX0912B350Y
Contextual Info: Data sheet sta tu s Preliminary specification date o t Issue July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION D ESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

samtec ASP

Abstract: ASP Series samtec samtec asp connector
Contextual Info: F-203 0,635mm EDGE MOUNT SPECIFICATIONS For complete specifications see www.samtec.com?QTS-EM or www.samtec.com?QSS-EM Insulator Material: Liquid Crystal Polymer Terminal Material: Phosphor Bronze Current Rating: Testing Now! Operating Temp Range: -65°C to +125°C

Contextual Info: F-203 0,80 mm HI-SPEED HEADER SPECIFICATIONS QTE -EM SERIES TM Mates with: QSE For complete specifications see www.samtec.com?QTE-EM APPLICATIONS Insulator Material: Liquid Crystal Polymer Terminal Material: Phosphor Bronze Current Rating: Testing Now! Operating Temp Range:

Contextual Info: QSS-075-01-L-D-EM 2 F -2 0 4 635m EDGE MOUNT SPECIFICATIONS For complete specifications see www.samtec.com?QTS-EM or www.samtec.com?QSS-EIVl Insulator Material: Liquid Crystal Polymer Terminal Material: Phosphor Bronze Current Rating: Testing Now! Operating Temp Range:

Contextual Info: F-205=1 mm BTE-EM EDGE MOUNT HEADER SERIES SPECIFICATIONS For complete specifications see www.samtec.com?BTE-EM Insulator Material: Liquid Crystal » 7 li Polymer m *.m m Terminal Material: Phosphor Bronze Plating: Au over 50p“ 1,27pm Ni Current Rating:

BTH EM2

Abstract: samtec bsh 17 BSH-030-01-F-D-EM2 bth-060-01-f-d-em2 1-800-SAMTEC-9 bth 068
Contextual Info: FACTSHEET F-200-1 BSH–030–01–F–D–EM2 BSH–060–01–L–D–EM3 BTH–060–01–F–D–EM2 -EM , 0,50 mm EDGE MOUNT BTH BSH (-EM) SERIES SPECIFICATIONS Materials: Insulator Material: Liquid Crystal Polymer Terminal Material: Phosphor Bronze

equivalent of SL 100 NPN Transistor

Abstract: MX0912B250Y
Contextual Info: Data sha e t status Preliminary specification data o f Issue July 1990 MX0912B250Y NPN silicon planar epitaxial microwave power transistor APPLICATION DESCRIPTION • Interdigitated structure; high Intended for use in co m m on base em itter efficiency. • Diffused em itter ballasting

Samtec

Abstract: 2395 transistor datasheet BSS-025-01-F-D-EM2 1-800-SAMTEC-9
Contextual Info: FACTSHEET F-200-1 BTS–075–01–L–D–EM3 BTS–050–01–F–D–EM2 BSS–025–01–F–D–EM2 -EM , 0,64 mm EDGE MOUNT BSS BTS (-EM) SERIES SPECIFICATIONS Materials: Insulator Material: Liquid Crystal Polymer COntact Material: Phosphor Bronze Current Rating:

Contextual Info: FACTSHEET F-202-1 QTE–060–01–L–D–EM2 QTE–040 –01–F–D–EM2–GP QTE–020–01–L–D–EM2 0,80 mm HI-SPEED HEADER SPECIFICATIONS Guide Post option available Mates with: QSE For complete specifications see www.samtec.com?QTE-EM QTE -EM

Contextual Info: What HEW LETT milUMPACKARD High-Performance IR Em itter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Em itter Series HSDL-54xx IR D etector Series Technical Data Features Description • Subminiature Flat Top and Dom e Package Size - 2x2 mm

528128

Abstract: C144 W.S C c159 age C143 equivalent TC524258 KSD 166 TC524258B
Contextual Info: TOSHIBA TC528128B t a r g e t s il ic o n g a t e c m o s 13I,072WORDSx8BITS MULTIPORT DRAM DESCRIPTION The T C 5 2 8 128B is a CM OS m ultiport m em ory equipped with a 131,072-words by 8-bits dynam ic random access m em ory RAM port and a 256-words by 8-bits static serial access m em ory (SAM ) port. The T C 528128B

intel 82543

Abstract: 82544EI 82543 82540EP 82544gc CTRL_EXT ATMEL 350 93c46 82544 Family of Gigabit Ethernet intel 82543 software 82541PI Gigabit Ethernet Controller
Contextual Info: PCI/PCI-X Family of Gigabit Ethernet Controllers Software Developer’s Manual 82540EP/EM, 82541xx, 82544GC/EI, 82545GM/EM, 82546GB/EB, and 82547xx 317453006EN.PDF Revision 4.0 Legal Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY

1990- 2335 optocoupler

Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
Contextual Info: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors

pcc 189

Abstract: sg sf sm texas instrument Audio Processor with Pushbutton ds2501 Wiring Diagram thermostat NC 40 NC 90 national semiconductors book clock traffic light signal control using microcontroller pic thesis sram book DS21530
Contextual Info: 2 2 > - ft DALLAS W W SEMICONDUCTOR C opyright 1995 by D allas S em ico n d uctor C orporation. A ll R ights R eserved. D allas S em ico n d uctor retains all ow n e rsh ip rights in th e te ch n olo gy described herein. Tradem arks and registered tra d e m a rks of D allas S em ico n d uctor include each of th e fo llo w in g :

CY7C09569V

Abstract: CY7C09579V
Contextual Info: # CYPRESS CY7C09569V PRELIMINARY _ CY7C09579V 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3V Low operating power Features • True dual-ported m em ory cells which allow sim ulta­ neous access of the same m em ory location • Two Flow-Through/Pipelined devices

Contextual Info: FACTSHEET F-202-1 BTE – 020 – 01–L–D–EM2 BTE–060–01–L–D–EM2 BTE – 040 – 01–F–D–EM2 -EM 0,80 mm EDGE MOUNT HEADER BTE SERIES SPECIFICATIONS Mates with: BSE For complete specifications see www.samtec.com?BTE-EM APPLICATION SPECIFIC OPTION

Contextual Info: BTE—060-01-L-D-EM2 BTE-040-01-F-D—EM2 ElM 1IINnr ,8 C m m SPECIFICATIONS • 5 BTE -EM) ■ ■ SERIES Mates with: BSE For complete specifications see www.samtec.com?BTE-EM Insulator Material: Liquid Crystal T O Polymer >°i Terminal Material: Phosphor Bronze