MX0912B350Y Search Results

Contextual Info: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.

MX0912B350Y

Contextual Info: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high

HCW51

Abstract: MX0912B350Y D0310 IEC134
Contextual Info: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting

NPN Silicon Epitaxial Planar Transistor

Abstract: Zv-z 21 MX0912B350Y
Contextual Info: Data sheet sta tu s Preliminary specification date o t Issue July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION D ESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

MX0912B350Y

Contextual Info: Data sheet status Preliminary specification date of Issue June 1992 P H IL IP S MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE ]> INTERNATIONAL • 7110ûSb GD4b354 ÔÛT « P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

MX0912B250Y

Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

SD1446

Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

2SC635

Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Contextual Info: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642