EM 483 MOTOR Search Results

T0220IS

Abstract: LC-485 D55A7D D55A D54A7D
Contextual Info: D54A7D NPN POWER DARLINGTON TRANSISTORS 100 VOLTS 7 AMP, 30 WATTS Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High D C Current Gain: hFE = 2000 Min. (at V q e = 3V, lc =3A) CASE STYLE TO-220IS

NS 8002 1151

Abstract: MM3735 TO213AA MAX3886
Contextual Info: b3b?2S4 OOTSSDl S • f l O T b , ^ ^ / 4bE D MO TO R O L A SC X ST R S / R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3735 MM3737 DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistors Suffixes: //#//// H, HX, HXV Processed per MIL-S-19500/395B

MM3227

Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?55M 00*î24«î b S ■ f l O T b SEM ICONDUCTOR TECHNICAL DATA MM3227 Suffixes: Discrete M ilitary Products D m NPN Silicon Sm all-Signal Transistor H, HX //I//// . . . d esig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap p licatio n s

MM2896

Abstract: To206AF bo140
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications

017Q

Abstract: MOTOROLA TRANSISTOR 210
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?254 00*^73 b inoTt MOTOROLA Order this data sheet by MRA1618-35H/D SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power Transistor . . . designed primarily for wideband, large signal output and driver amplifier stages in the

Contextual Info: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72 SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications MM5682

TO206AB

Abstract: case 60-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b 3 b 72 54 0CH250S 5 «flO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistor M M 4239 Suffixes: HX, H X V /////// Processed per MIL-S-19500/xxx d e s ig n e d for g e n e ra l-p u rp o se sw itc h in g an d am p lifie r ap p lica tion s

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6 0 OHM This TMOS medium power field effect transistor is designed for

MJ8503

Abstract: MJ8502 MJ8504 J8503
Contextual Info: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S

Contextual Info: rZ Z ^7# S G S -T H O M S O N Mm^llJiCTB@mea BUV61 HIGH POWER NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125°C APPLICATION « SWITCHING REGULATORS . MOTOR CONTROL

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG25N1ZS1 HIGH POWER SWITCHING APPLICATIONS. Unit in nun MOTOR CONTROL APPLICATIONS. 3 -M 5 2 3 ± 0.5 2 3 ± 0 .S B 2 , FA S T -O N -T A B # I I P 2 - 0 5 .6 Í O .3 . High Input Impedance . High Speed tf=l.Ons Max. trr=0.5ys(Max.)

c 3198 transistor

Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed

transistor j411

Abstract: MJ411 J410 mj411 transistor
Contextual Info: MOTOROLA SC XSTRS/R F H E D | b3b73S>. D O i l - lb ? 0 | / -/ J V J MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O L T A G E NPN SILICON T R AN SISTO R S 5 AM PERE . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.

transistor c 3228

Abstract: 2n6546 motorola 2N6546 TD-204AA td204aa
Contextual Info: m o to r o l a sc xstrs/ r 12E D I f t 3 b7 5 S 4 0Gô4b70 T | - MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 15 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 W ATTS

T39 diode

Contextual Info: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,

2N3422

Abstract: 2N3442 2n4347 2N4327 C0440
Contextual Info: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in

teg 105 kpa

Abstract: mpx4101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPX4101 SERIES In teg rated Silicon Pressure Sensor M anifold Absolute Pressure Sensor O n-Chip Signal Conditioned, Tem perature Com pensated and C alibrated INTEGRATED PRESSURE SENSOR 15 to 102 kPa 2.18 to 14.8 psi

ATC 2603

Abstract: te 2443 MOTOROLA transistor 08BSC NS 8002 1151 MD3468
Contextual Info: MOTOROLA SC XSTRS/R F 4bE ]> b3 b?2 54 0 0^ 24 34 MOTOROLA 5 M 0 T b T -H 3 -¿ 5 SEMICONDUCTOR TECHNICAL DATA ( Discrete Military Products P N P S ilic o n Dual/Quad Sm all-Signal T ra n sisto rs Dm mini MD3468 MD3468F (Duals) MHQ3468 MQ3468 (Quads) . . . designed fo r g en era l-p u rp o s e a m p lifie r and sw itch in g applications. M atc h e d devices

THT bsc 25

Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS

p 477

Abstract: TO206AA
Contextual Info: MOTOROLA SC X S T R S / R F MOTOROLA 4bE ]> b3b?2S4 00=15401, 7 " '3 3 - / S ' S MOTb S E M IC O N D U C T O R TECHNICAL DATA M JM 3716 DM0 Discrete M ilita ry Products NPIM S ilic o n P o w e r T r a n s is t o r m Suffixes: HX, HXV in i Processed per

sm 0038

Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.

BU208

Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
Contextual Info: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection

Contextual Info: MOTOROLA SC XSTRS/R 4bE D F b3b?2S4 o o m i n 7 " F 3 3 -C Í7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6080 The RF Line 4.0 W - 175 MHz R F POW ER T R A N S IS T O R N P N S IL IC O N R F P O W E R T R A N S IS T O R NPN SILICON designed fo r 12.5 V o lt V H F large-signal pow er a m plifie r a pplica ­

BUV 12

Abstract: buv12
Contextual Info: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.