EM HEATSINK PROFILE Search Results

Contextual Info: Thermal Considerations Overview Sim plified therm al m anagem ent is one o f the benefits o f using V icor converters. H igh operating efficiency m inim izes heat loss, and the low profile package features an easily accessible, electri­ cally isolated therm al interface surface.

MCA45T

Abstract: capacitor philips ll
Contextual Info: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

capacitor 104 PF disc

Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Contextual Info: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

Contextual Info: WDBR SER IES 7 f Ì^ C ÌT O / 7 / C S ULTRA LOW PROFILE DYNAMIC BRAKING/POWER RESISTORS • • • • • • Simple construction, lower installation cost 2kW and 5kW versions Failsafe Low inductance UL and IP approval pending Enables reduction in overall product size

DC-340

Contextual Info: m electronics WDBR SERIES ULTRA LOW PROFILE DYNAMIC BRAKING/PO W ER RESISTORS Simple construction, lower installation cost 2kW and 5kW versions Failsafe Low inductance UL and IP approval pending Enables reduction in overall product size This new range of thick film on steel planar power resistors offers high pulse withstand capability,

BFQ26

Abstract: BFQ268
Contextual Info: Philips Components bfq268 _ j \ _ NPN HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR NPN silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down

TRANSISTOR b77

Abstract: 4312.020 transistor tt 2222 BLV92
Contextual Info: PHILIPS INTERNATIONAL bSE J> WM 711DöSb DDb303S 50T BLV92 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use In mobile radio transmitters In the 9 0 0 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

LTE21009R

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile

Contextual Info: T e m ic BPX99R .S e ni i c » n il u i i Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi­ taxial planar Darlington phototransistor in a hermetically sealed low profile TO—16 metal case. The solid metal base allows the user to mount the device

BFQ234

Abstract: BFQ25 BFQ254 transistor YA
Contextual Info: Philips Components bfq254 _ J >- PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down

BLV2045

Abstract: smd TRANSISTOR F2 629 08223
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV2045 FEATURES PINNING - SOT39QA • E m itter ballasting resistors fo r optim um tem perature profile PIN • Gold m etallization ensures excellent reliability • Internal input and output m atching to achieve high

transistor smd ba rn

Abstract: sot494
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

BPX99R

Abstract: BPX99 TO46 lens phototransistor Telefunken Phototransistor 8326K mm glass lens phototransistor
Contextual Info: Tem ic BPX99R S e m i c o n d u c t o r s Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi­ taxial planar Darlington phototransistor in a hermetically sealed low profile TO-46 metal case. The solid metal base allows the user to mount the device

2222-809-05002

Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
Contextual Info: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

wr48t12

Abstract: WR24T05-12/55K WR24T05-15/55K computer products wr24t05 12V5A
Contextual Info: WR-K SERIES Single, dual and triple output Recom m ended for new design-ins • ■ ■ ■ ■ ■ ■ Low profile - 0.91 inch high Efficiencies to 84% UL approved Single outputs 2:1 input range PCB or chassis mounting Pi input filter OVP on all outputs

transistor tt 2222

Abstract: International Power Sources TT 2222 BLV93
Contextual Info: PHILIPS INTER N A T I O N A L bSE D H TllOÖSb DDb3043 3öb BLV93 J U.H.F. POW ER TRA N SISTO R N-P-N silicon planar epitaxial transistor prim arily intended for use in m obile radio transm itters in the 9 0 0 M H z co m m u n ica tio n s band. Features: • multi-base structure and em itter-ballasting resistors fo r an op tim u m tem perature profile

resistor MR25

Abstract: transistor tt 2222 resistor MR25 philips philips MR25 MR25 resistor led MR25 MR25 TT 2222 philips resistor mr25 MR25 resistors
Contextual Info: N AMER PH IL IP S/ DIS CRE TE bTE D m ^53 ^ 3 1 002001b fibM I IAPX BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

Contextual Info: CA 25 25 S e rie s to to 40 W a tts 4 0 W a t t s - C A S e r ie s Ultra Wide Input Voltage Range, Low Profile F eatures Ultra-Wide Input Voltage Range 4 :1 1 LC Input Filter for Low Reflected Ripple Current Regulated Outputs Thermal Shutdown with Auto-Recovery

Contextual Info: WR-K SERIES Single, dual and triple output Recommended for new design-lns • ■ ■ ■ ■ ■ ■ Low profile - 0.91 inch high Efficiencies to 84% UL approved Single outputs 2:1 input range PCB or chassis mounting Pi input filter OVP on all outputs 2

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

Contextual Info: Application Note Power Modules with Phase-Change Material Handling of Power Modules with Pre-Applied Phase-Change Material Application Note no.: AN_2012-07_001-v01 Table of Contents Re v is i on h is to r y: . 3

Nippon Chemi-Con lxf capacitor

Abstract: NFC40-24T05-12 LXF SERIES NIPPON CHEMI-CON Nippon Chemi-Con lxf NFC40-24S05-M nippon lxf nippon lxf series LXF Series NFC40-48S15 Nippon Chemi-Con sxe capacitor
Contextual Info: ARTESYHM Y* E C H N O L O B> WQg I I NFC40 SERIES Single and triple output E S • • • • • • • • Providing 40W o f po w e r in a 2.2 x 2.2 x 0.5 inch package, the highly specified NFC40 Series o f DC/DC converters were designed w ith today's dem anding applications in

Heatsink For stud devices

Abstract: EM HEATSINK PROFILE
Contextual Info: pow er assem blies heatsinks The stan d ard range of heatsinks is shown with a brief resum é of their characteristics. They are intended for use with all our power semiconductors - from the small stud base through to large disc devices and modules. All heatsinks are suitable for